BSS84 TSC | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

1 Version: A2007

-60V, -150mA, 8Ω

FEATURES

  • Low RDS(ON) to minimize conductive losses
  • Logic level
  • Low gate charge for fast power switching
  • RoHS Compliant
  • Halogen-free according to IEC 61249-2-21

APPLICATIONS

  • Low Side Load Switching
  • Level Shift Circuits
  • General Switch Circuits KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS -60 V RDS(on) (max) VGS = -10V 8 Ω VGS = -4.5V 10 Qg 1 nC SOT-23 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 1) TA = 25°C ID -150 mA TA = 125°C -70 Pulsed Drain Current IDM -0.6 A Total Power Dissipation TA = 25°C PD 357 mW TA = 125°C 71 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL MAXIMUM UNIT Junction to Ambient Thermal Resistance RӨJA 350 °C/W Thermal Performance Note: RӨJA is the sum of the junction -to-case and case -to-ambient thermal resistances. The case - thermal reference is defined at the solder mounting surface of the drain pins. R ӨJC is guaranteed by design while R ӨCA is determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in2 pad of 2 oz copper.

2 Version: A2007

ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA BVDSS -60 -- -- V Gate Threshold Voltage VGS = VDS, ID = -250µA VGS(TH) -0.9 -1.5 -2.0 V Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Drain-Source Leakage Current VGS = 0V, VDS = -60V IDSS -- -- -1 µA VGS = 0V, VDS = -60V Drain-Source On -State Resistance (Note 3) VGS = -10V, ID = -150mA RDS(on) -- 3.6 8 Ω VGS = -4.5V, ID = -130mA -- 3.9 10 Forward Transconductance (Note 3) VDS = -5V, ID = -150mA gfs -- 0.5 -- S Dynamic (Note 3) Total Gate Charge VGS = -10V, VDS = -30V, ID = -150mA Qg -- 1.9 -- nC Total Gate Charge VGS = -4.5V, VDS = -30V, ID = -130mA Qg -- 1 -- Gate-Source Charge Qgs -- 0.3 -- Gate-Drain Charge Qgd -- 0.3 -- Input Capacitance VGS = 0V, VDS = -30V f = 1.0MHz Ciss -- 37 -- pF Output Capacitance Coss -- 15 -- Reverse Transfer Capacitance Crss -- 7 -- Switching (Note 3) Turn-On Delay Time VGS = -10V, VDS = -30V, ID = -150mA, RG = 6Ω td(on) -- 10 -- ns Turn-On Rise Time tr -- 15 -- Turn-Off Delay Time td(off) -- 21 -- Turn-Off Fall Time tf -- 78 -- Source-Drain Diode Forward Voltage (Note 2) VGS = 0V, IS = -150mA VSD -- -- -1.2 V Reverse Recovery Time IS = -150mA , dI/dt = 100A/μs trr -- 24 -- ns Reverse Recovery Charge Qrr -- 14 -- nC Notes: 1. Silicon limited current only. 2. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%. 3. Switching time is essentially independent of operating temperature.

ORDERING INFORMATION

ORDERING CODE PACKAGE PACKING BSS84 RFG SOT-23 3,000pcs / 7” Reel

3 Version: A2007

(TA = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) -VDS, Drain to Source Voltage (V) RDS(on), Drain-Source On-Resistance (Ω) -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) Qg, Gate Charge (nC) RDS(on), Drain-Source On-Resistance (Normalized) TJ, Junction Temperature (°C) RDS(on), Drain-Source On-Resistance (Ω) -VGS, Gate to Source Voltage (V) -ID, Drain Current (A) 0.5 1.5 2.5 -75 -50 -25 0 25 50 75 100 125 150 VGS=-10V ID=-150mA 0 0.5 1 1.5 2 VDS=-30V ID=-150mA 0.1 0.2 0.3 0.4 0.5 0.6 0 1 2 3 4 25℃ -55℃ 150℃ 0.4 0.8 1.2 1.6 0 1 2 3 4 5 6 7 VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-4V VGS=-3.5V 0 0.2 0.4 0.6 0.8 1 VGS=-10V VGS=-4.5V 2 3 4 5 6 7 8 9 10 ID=-150mA

4 Version: A2007

(TA = 25°C unless otherwise noted) Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature Maximum Safe Operating Area, Junction -to-Ambient Source-Drain Diode Forward Current vs. Voltage Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance, ZӨJA t, Square Wave Pulse Duration (sec) C, Capacitance (pF) -VDS, Drain to Source Voltage (V) BVDSS (Normalized) Drain-Source Breakdown Voltage TJ, Junction Temperature (°C) -IS, Reverse Drain Current (A) -VSD, Body Diode Forward Voltage (V) -VDS, Drain to Source Voltage (V) -ID, Drain Current (A) 0.8 0.9 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 ID=-1mA 0 10 20 30 40 50 60 Ciss Coss Crss 0.1 25℃ 150℃ -55℃ 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE RӨJA=350°C/W Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single Notes: Duty = t1 / t2 TJ = TA + PDM x ZӨJA x RӨJA 0.001 0.01 0.1 1 10 100 RDS(on) 10us 100us 100ms DC SINGLE PULSE RӨJA=350°C/W TA=25°C 10s 10ms 1ms

5 Version: A2007

PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SOT-23 SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM B84 = Device code F = Site Code Y = Year Code M = Month code O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec B84FYM

6 Version: A2007

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