BSS84 GWSEMI | Alldatasheet
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DESCRIPTION
These minia ture surface mount MOSF ETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. MARKING MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS -50 V Gate-Source Voltage V GS ±20 V Continuous Drain Current I D -0.13 A Pulsed Drain Current (note 1) @tp <10 μs I DM -0.52 A Power Dissipation P D 225 mW Thermal Resistance from Junction to Ambient (note 2) R θJA 556 ℃/W Operation Junction and Storage Temperature Range ℃ TJ,TSTG -55~+150 Maximum Lead Temperature for Soldering Purposes , Duration for 5 Seconds T L 260 ℃ SOT-23 1. GATE 2. SOURCE 3. DRAIN V (BR)DSS R DS(on) MAX I D -50 V 8Ω@-10V -0.13A Ω@-5V Equivalent Circuit www.shunyegroup.com SS84 B P-CHANNEL MOSFET Plastic-Encapsulate MOSFETS FEATURE z Energy Efficient z Low Threshold Voltage z High-speed Switching z Miniature Surface Mount Package Saves Board Space APPLICATION z DC −DC converters,load switching, power management in portable and battery−powered products such as computers, printers, cellular and cordless telephones.
MOSFET ELECTRICAL CHARACTERISTICS aT =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =-250µA -50 V V DS =-50V,V GS = 0V -15 µA Zero gate voltage drain current I DSS V DS =-25V,V GS = 0V -0.1 µA Gate-body leakage current I GSS V GS =±20V, V DS = 0V ±5 µA Gate threshold voltage (note 3) V GS(th) V DS GS , I D V GS =-5V, I D =-0.1A 5.8 10 Ω Drain-source on-resistance (note 3) R DS(on) V GS =-10V, I D =-0.1A 4.5 8 Ω Forward transconductance (note 1) g FS V DS =-25V; I D =-100mA 50 mS DYNAMIC CHARACTERISTICS (note 4) Input capacitance C iss 30 pF Output capacitance C oss 10 pF Reverse transfer capacitance C rss V DS =5V,V GS =0V,f =1MHz 5 pF SWITCHING CHARACTERISTICS (note 4) Turn-on delay time t d(on) 2.5 ns Turn-on rise time t r 1 ns Turn-off delay time t d(off) 16 ns Turn-off fall time t f V DD =-15V, R L =50Ω, I D =-2.5A 8 ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current I S -0.13 A Pulsed Current I SM -0.52 A Diode forward voltage (note 3) V SD I S =-0.13A, V GS = 0V -2.2 V Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%. 4. Guaranteed by design, not subject to producting. www.shunyegroup.com SS84 B P-CHANNEL MOSFET
-0.01 -0.1 -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -50 -100 -150 -200 -250 -300 -350 -400 -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 25 50 75 100 125 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 T a =100 V SD I S — — T a =25 SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) V GS =-10V V GS =-6V V GS =-4.5V V GS =-4V V GS =-3V Output Characteristics V GS =-2.5V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) V GS =-10V V GS =-5V T a =25 Pulsed ON-RESISTANCE R DS(ON) DRAIN CURRENT I D (mA) I D ——R DS(ON) T a =100 I D =-0.1A T a =25 ON-RESISTANCE R DS(ON) GATE TO SOURCE VOLTAGE V GS (V) V GS ——R DS(ON) V DS =-10V DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics T a =100 T a =25 I D =-250uA Threshold Voltage THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T J ( ) www.shunyegroup.com www.shunyegroup.com www.shunyegroup.com SS84 B P-CHANNEL MOSFET Typical Characteristics
A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SS84 B P-CHANNEL MOSFET PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT-23