BSS84 ONSEMI | Alldatasheet
Document overview
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Technical content
Features
- −0.13 A, −50 V , RDS(on) = 10 /C0087 at VGS = −5 V
- V oltage−Controlled P−Channel Small−Signal Switch
- High−Density Cell Design for Low RDS(on)
- High Saturation Current
- This Device is Pb−Free and Halogen Free MARKING DIAGRAM Device Package Shipping †
ORDERING INFORMATION
BSS84, BSS84−G SOT−23−3 (Pb−Free) 3000 / Tape & Reel SOT−23−3 CASE 318−08 S D G SP = Specific Device Code M = Date Code* /C0071 = Pb−Free Package SPM/C0071 /C0071 (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Drain Gate Source
www.onsemi.com ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDSS Drain−Source Voltage −50 V VGSS Gate−Source Voltage ±20 ID Drain Current – Continuous (Note 1) −0.13 A Drain Current – Pulsed (Note 1) −0.52 PD Maximum Power Dissipation (Note 1) 0.36 W Derate Above 25°C 2.9 mW/°C TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 s 300 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit R/C0113JA Thermal Resistance, Junction−to−Ambient (Note 1) 350 °C/W ELECTRICAL CHARACTERISTICS (Note 2) TA = 25°C unless otherwise noted. Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = −250 /C0109A −50 − − V /C0068BVDSS /C0068TJ Breakdown Voltage Temperature Coefficient ID = −250 μA, Referenced to 25°C − −48 − mV/°C IDSS Zero Gate Voltage Drain Current VDS = −50 V, VGS = 0 V − − −15 /C0109A VDS = −50 V, VGS = 0 V, TJ = 125°C − − −60 IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V − − ±10 nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = −1 mA −0.8 −1.7 −2 V /C0068VGS(th) /C0068TJ Gate Threshold Voltage Temperature Coefficient ID = −1 mA, Referenced to 25°C − 3 − mV/°C RDS(on) Static Drain–Source On–Resistance VGS = −5 V, ID = −0.10 A − 1.2 10 /C0087 VGS = −5 V, ID = −0.10 A, TJ = 125°C − 1.9 17 ID(on) On–State Drain Current VGS = −5 V, VDS = −10 V −0.6 − − A gFS Forward Transconductance VDS = −25 V, ID = −0.10 A 0.05 0.6 − S DYNAMIC CHARACTERISTICS Ciss Input Capacitance VDS = −25 V, VGS = 0 V, f = 1.0 MHz − 73 − pF Coss Output Capacitance − 10 − Crss Reverse Transfer Capacitance − 5 − RG Gate Resistance VGS = 15 mV, f = 1.0 MHz − 9 − /C0087
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- R /C0113JA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. R/C0113JA is guaranteed by design while R/C0113JA is determined by the user’s board design. a) 350°C/W when mounted on a minimum pad.
- Pulse Test: Pulse Width ≤ 300 /C0109s, Duty Cycle ≤ 2.0%
Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain
SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 1 2 XXXM/C0071 /C0071 XXX = Specific Device Code M = Date Code /C0071= Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ /C0071”, may or may not be present. GENERIC MARKING DIAGRAM* NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. SOLDERING FOOTPRINT VIEW C L 0.25 e E E b A SEE VIEW C DIM A MIN NOM MAX MIN MILLIMETERS 0.89 1.00 1.11 0.035 INCHES A1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 NOM MAX H STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE −ANODE STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: PIN 1. NO CONNECTION 2. CATHODE 3. ANODE STYLE 19: PIN 1. CATHODE 2. ANODE 3. CATHODE −ANODE STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 20: PIN 1. CATHODE 2. ANODE 3. GATE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 1 THRU 5: CANCELLED STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE c T TOP VIEW SIDE VIEW END VIEW 2.90 0.80 DIMENSIONS: MILLIMETERS 0.90 PITCH 3X 0.95 RECOMMENDED STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 98ASB42226BDOCUMENT NUMBER: DESCRIPTION: Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1SOT−23 (TO−236) © Semiconductor Components Industries, LLC, 2019 www.onsemi.com
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