DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V Voltage-Controlled P-Channel Small-Signal Switch High-Density Cell Design for Low RDS(ON) High Saturation Current
Description
This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch. Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may dam age the device. The device may not function or be operable above the recommended operating conditions and stressi ng the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Ratings Unit VDSS Drain-Source Voltage −50 V VGSS Gate-Source Voltage ±20 V ID Drain Current (1) Continuous −0.13 A Pulsed −0.52 A PD Maximum Power Dissipation(1) 0.36 W Derate Above 25°C 2.9 mW / °C TJ, TSTG Operating and Storage Ju nction Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 Seconds 300 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient(1) 350 °C/W Note: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mountin g surface of the drain pins. R θJA is guaranteed by design, while R θJA is determined by the user's board design. Scale 1: 1 on letter-size paper. Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity SP BSS84 7’’ 8mm 3000 a) 350°C/W when mounted on a minimum pad G D S SOT-23 D SG
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BSS84 • Rev. 1.1.0 2 BSS84 — P-Channel Enhancement Mode Field-Effect Transistor Electrical Characteristics(2) Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 μA –50 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = –250 μA, Referenced to 25℃ –48 mV / ℃ IDSS Zero Gate Voltage Drain Current VDS = –50 V, V GS = 0 V –15 μA VDS = –50 V, VGS = 0 V, TJ = 125°C –60 μA IGSS Gate–Body Leakage. VGS = ±20 V, V DS = 0 V ±10 nA BVDSS Drain–Source Breakdown Voltage VGS = 0 V, I D = –250 μA –50 V On Characteristics(2) VGS(th) Gate Threshold Voltage V DS = VGS, ID = –1 mA –0.8 –1.7 –2 V VGS(TH) TJ Gate Threshold Voltage Temperature Coefficient ID = –1 mA, Referenced to 25℃ 3 mV / ℃ RDS(on) Static Drain–Source On–Resistance VGS = –5 V, ID = –0.10 A 1.2 10.0 Ω VGS = –5 V, ID = –0.10 A, TJ = 125°C 1.9 17.0 Ω ID(on) On–State Drain Current V GS = –5 V, VDS = – 10 V –0.6 A gFS Forward Transconductance V DS = –25 V, ID = – 0.10 A 0.05 0.60 S Dynamic Characteristics CISS Input Capacitance VDS = –25 V, VGS = 0 V, f = 1.0 MHz 73 pF COSS Output Capacitance 10 pF CRSS Reverse Transfer Capacitance 5 pF RG Gate Resistance V GS = –15 mV, f = 1.0 MHz 9 Ω Switching Characteristics(2) td(on) Turn–On Delay VDD = –30 V, I D = – 0.27 A, VGS = –10 V, R GEN = 6 2.5 5.0 ns tr Turn–On Rise Time 6.3 13.0 ns td(off) Turn–Off Delay 10 20 ns tf Turn–Off Fall Time 4.8 9.6 ns Qg Total Gate Charge VDS = –25 V, ID = –0.10 A, VGS = –5 V 0.9 1.3 nC Qgs Gate–Source Charge 0.2 nC Qgd Gate–Drain Charge 0.3 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -0.13 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = - 0.26 A(2) -0.8 -1.2 V tRR Diode Reverse-Recovery Time IF = -0.1 A, diF / dt = 100 A / µs(2) 10 ns QRR Diode Reverse-Recovery Charge 3 nC Note: 2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE warranty therein, which covers Fairchild products. http://www.fairchildsemi.com/packaging/tr/SOT23-3L_tr.pdf.
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BSS84 • Rev. 1.1.0 6 BSS84 — P-Channel Enhancement Mode Field-Effect Transistor TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool AccuPower AX-CAP®* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED® Dual Cool™ EcoSPARK EfficientMax ESBC Fairchild® Fairchild Semiconductor® FACT Quiet Series FACT® FAST® FastvCore FETBench FPS F-PFS FRFET® Global Power Resource SM GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and Better™ MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mWSaver OptoHiT OPTOLOGIC® OPTOPLANAR® PowerTrench® PowerXS™ Programmable Active Droop QFET® QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time™ SignalWise SmartMax SMART START Solutions for Your Success SPM® STEALTH SuperFET® SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS® SyncFET Sync-Lock™ TinyBoost TinyBuck TinyCalc TinyLogic® TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT®* μSerDes UHC® Ultra FRFET UniFET VCX VisualMax VoltagePlus XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64