BSS84

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 6

Technical content

Document number: DS30149 Rev. 27 - 2 1 of 6 www.diodes.com May 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max ID TA = +25°C -50V 10Ω @ VGS = -5V -130mA Description and Applications This MOSFET has been designed to minimize on -state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

  • General-purpose interfacing switches
  • Power-management functions
  • Analog switches Features and Benefits
  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
  • An automotive-compliant part is available under a separate datasheet (BSS84Q) Mechanical Data
  • Package: SOT23
  • Package Material: UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Finish (Lead-Free Plating) Solderable per MIL-STD-202, Method 208
  • Terminal Connections: See Diagram
  • Weight: 0.009 grams (Approximate) Ordering Information (Note 4) Orderable Part Number Package Packing Qty. Carrier BSS84-7-F SOT23 (Standard) 3000 Tape & Reel BSS84-13-F SOT23 (Standard) 10000 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2003 - 2026 2027 2028 2029 2030 2031 2032 2033 2034 2035 Code P - N P R S T U V W X Y Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D D G S SOT23 (Standard) Top View Equivalent Circuit Top View K84 = Product Type Marking Code YM = Date Code Marking Y or Y or Y= Year (ex: N = 2026) M or M = Month (ex: 9 = September) D S G

Document number: DS30149 Rev. 27 - 2 2 of 6 www.diodes.com May 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. BSS84 Maximum Ratings (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -50 V Drain-Gate Voltage RGS ≤ 20kΩ VDGR -50 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current (Note 5) Continuous ID -130 mA Pulsed Drain Current IDM -1.2 A Thermal Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 300 mW Thermal Resistance, Junction to Ambient RθJA 417 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -50 — — V VGS = 0, ID = -250µA Zero Gate Voltage Drain Current IDSS — — -1 µA VDS = -50V, VGS = 0, TJ = +25°C — — -2 µA VDS = -50V, VGS = 0, TJ = +125°C (Note 7) — — -100 nA VDS = -25V, VGS = 0, TJ = +25°C Gate-Body Leakage IGSS — — ±10 nA VGS = ±20V, VDS = 0 ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) -0.8 — -2.0 V VDS = VGS, ID = -1mA Static Drain-Source On-Resistance RDS(ON) — 3.2 10 Ω VGS = -5V, ID = -0.100A Forward Transconductance gFS 0.05 — — S VDS = -25V, ID = -0.1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 24.6 45 pF VDS = -25V, VGS = 0, f = 1.0MHz Output Capacitance Coss — 4.7 25 pF Reverse Transfer Capacitance Crss — 2.8 12 pF Gate Resistance Rg — 916 — Ω VDS = 0, VGS = 0, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 0.28 — nC VDS = -10V, ID = -0.1A Total Gate Charge (VGS = -10V) Qg — 0.59 — nC Gate-Source Charge Qgs — 0.09 — nC Gate-Drain Charge Qgd — 0.08 — nC Turn-On Delay Time tD(ON) — 10 — ns VDD = -30V, ID = -0.27A, RGEN = 50Ω, VGS = -10V Turn-Off Delay Time tD(OFF) — 18 — ns Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown in Diodes Incorporated’s package outline PDFs, which can be found on our website at http://www.diodes.com/package-outlines.html. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing .

Document number: DS30149 Rev. 27 - 2 3 of 6 www.diodes.com May 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. BSS84 100 25 50 75 100 125 150 175 200 P , POWER DISSIPATION (mW)D T , AMBIENT TEMPERATURE ( 蚓) Fig. 1 Max Power Dissipation vs. Ambient Temperature A 150 200 250 300 350 400 -600 -500 -400 -300 -200 -100 0 -2-1 -5-4-3 I , DRAIN-SOURCE CURRENT (mA)D V , DRAIN-SOURCE VOLTAGE (V) Fig. 2 Drain-Source Current vs. Drain-Source Voltage DS 0.0 -1.0 -0.8 -0.6 -0.4 -0.2 I , DRAIN-CURRENT (A)D V , GATE-SOURCE VOLTAGE (V) Fig. 3 Drain-Current vs. Gate-Source Voltage GS 0 -1 -2 -3 -4 -5 V , GATE-SOURCE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage GS T = 25 CA ° T = 125 CA ° R , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ( ) DS(ON) -50 -25 0 25 50 12510075 150 T , JUNCTION TEMPERATURE (蚓) Fig. 5 On-Resistance vs. Junction Temperature J V = -10V I = -0.13A GS D R , ON-RESISTANCE ( )DS(ON)  0.0 5.0 10.0 I , DRAIN-CURRENT (A) Fig. 6 On-Resistance vs. Drain-Current D 15.0 20.0 25.0R , ON-RESISTANCE ( )DS(ON)  (°C) (°C)

Document number: DS30149 Rev. 27 - 2 4 of 6 www.diodes.com May 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. BSS84 100 0 5 10 15 20 25 30 35 40 CT, JUNCTION CAPACITANCE (pF) VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Junction Capacitance f = 1MHz Ciss Coss Crss VGS (V) Qg (nC) Fig. 8 Gate Charge VDS = -10V, ID = -0.1A 0.001 0.01 0.1 0.1 1 10 100 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 SOA, Safe Operation Area TJ(Max) = 150℃ TA = 25℃ Single Pulse DUT on 1*MRP Board VGS = -10V RDS(ON) Limited DC PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms PW = 100µs

Document number: DS30149 Rev. 27 - 2 5 of 6 www.diodes.com May 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. BSS84 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 (Standard) SOT23 (Standard) Dim Min Max Typ A 0.90 1.15 1.025 A1 0.00 0.10 0.05 A2 0.85 1.10 0.975 b 0.30 0.51 0.40 c 0.080 0.202 0.11 D 2.80 3.00 2.90 E 2.25 2.55 2.40 E1 1.20 1.40 1.30 e 0.89 1.03 0.915 e1 1.78 2.05 1.83 F 0.40 0.60 0.535 L1 0.45 0.61 0.55 L 0.25 0.55 0.40 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 (Standard) Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 A A2 L GAUGE PLANE 0.25 D L1b E E1 e e1F a c X Y Y1 C

Document number: DS30149 Rev. 27 - 2 6 of 6 www.diodes.com May 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. BSS84 IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICU LAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incor porate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional - safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. 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