BSS84 CET | Alldatasheet
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PRELIMINARY. P-Channel Enhancement Mode MOSFET FEATURES D e -50V , -0.13A , Rosionj=10Q @Ves=-10V. High dense cell design for low Ros(on). e Rugged and reliable. Surface Mount Package. G SOT-23 : Fi . ° Gay’: ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) ee Drain Current-Continuous* @Ts=125°C |} o | o8 | a | Drain-Source Diode Forward Current * tuinnrowouen |e | es | m_| Operating Junction and Storage Ty, Tete 55 to 150 °C Temperature Range , THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient * 7-12
ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise noted) |e [iv OFF CHARACTERISTICS Drain-Source Breakdown Voltage Ves=0V, ID= -250A fof | fv] Zero Gate Voltage Drain Current Vos=-50V, Ves=0V Lf | a5] ua | Gate-Body Leakage Ves =+20V, Vos=0V Lf | sto] ma | 7 ON CHARACTERISTICS? Gate Threshold Voltage Vos=Ves, lp= -1mA fas fin] |v Drain-Source On-State Resistance Ves=-10V, n= -0.13A | [as] ofa Forward Transconductance Vos = -10V, ln=-0.13A josfoa] | s. DYNAMIC CHARACTERISTICS” Input Capacitance | [ar [as | oF | , Vos =-25V, Ves= OV Reverse Transfer Capacitance | sf [| SWITCHING CHARACTERISTICS" Tun Delay Time Voo= a, | fg [12 [1s | Rise Time | | Ves =-10V, | | 38 | 50 | ns Tum-Off Delay Time Reen= 502 | fa | 0 | ns | 7-13
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Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage
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Figure 9. Gate Charge Figure 10. Maximum Safe
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Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
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Figure 13. Normalized Thermal Transient Impedance Curve