BSS84-A HUIXIN | Alldatasheet

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Technical content

z DC −DC converters,load switching, power management in portable and battery−powered products such as computers, printers, cellular and cordless telephones. V(BR)DSS RDS(on) MAX ID -50V 8Ω@-10V -0.13A 10Ω@-5V Equivalent Circuit MARKING: B84 SOT-23 1. GATE 2. SOURCE DRAIN 3. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol V alue Unit Drain-Source Voltage VDS -50 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -0.13 A Pulsed Drain Current (note 1) @tp <10 μs IDM -0.52 A Power Dissipation PD 225 mW Thermal Resistance from Junction to Ambient (note 2) θJAR 556 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Maximum Lead Temperature for Soldering Purposes , Duration for 5 Seconds TL 260 ℃ +86-769-22857832 huixin@hxkj.hk Rev.01 Page 1 of 4

DESCRIPTION

These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE z Energy Efficient z Low Threshold Voltage z High-speed Switching z Miniature Surface Mount Package Saves Board Space z AEC-Q101qualified SOT-23 Plastic-Encapsulate MOSFETS BSS84-A P-CHANNEL MOSFET

aT =25 ℃ unless otherwise specified MOSFET ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =-250µA -50 V VDS =-50V,VGS = 0V -15 -15 Zero gate voltage drain current IDSS VDS =-25V,VGS = 0V 0.1-0.1 - Gate-body leakage current IGSS VGS =±20V, VDS = 0V µA ±5 Gate threshold voltage (note 3) GS(th) V VDS =VGS, ID =-250µA -0.9 -1.6 -2 V VGS =-5V, ID =-0.1A 5.8 10 Ω Drain-source on-resistance (note 3) DS(oR n) VGS =-10V, ID =-0.1A 4.5 8 Ω Forward transconductance (note 1) FSg DSV =-25V; ID=-100mA 50 mS DYNAMIC CHARACTERISTICS (note 4) Input capacitance Ciss 30 pF Output capacitance Coss 10 pF Reverse transfer capacitance Crss VDS =5V,VGS =0V,f =1MHz 5 pF SWITCHING CHARACTERISTICS (note 4) Turn-on delay time td(on) 2.5 ns Turn-on rise time tr 1 ns Turn-off delay time td(off) 16 ns Turn-off fall time tf VDD=-15V, RL=50Ω, ID =-2.5A 8 ns µA µA +86-769-22857832 huixin@hxkj.hk Rev.01 Page 2 of 4SOURCE −DRAIN DIODE CHARACTERISTICS Continuous Current I S -0.13 A Pulsed Current I SM -0.52 A Diode forward voltage (note 3) VSD I S=-0.13A, VGS = 0V -2.2 V Notes : 1. . Repetite rating : Pulse width limited by junction temperature. 2. . Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%. 4. Guaranteed by design, not subject to producting.

-0.01 -0.1 -0 -1 -9 -10 -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -50 -100 -150 -200 -250 -300 -350 -400 -0 -1 -8 -9 -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 25 50 75 100 125 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 Ta=100℃ VSDIS — — Ta=25℃ SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGEVOLTA SD (V) VGS=-10V VGS=-6V VGS=-4.5V VGS=-4V VGS=-3V Output Charact eristics VGS=-2.5V DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) VGS=-10V VGS=-5V Ta=25℃ Pulsed ON-RESISTANCE RDS(ON) () DRAIN CURRENT ID (mA) —— IDRDS(ON) Ta=100℃ ID=-0.1A Ta=25℃ ON-RESISTANCE RDS(ON) () GATE TO SOURCE VOLTAGEGATE GS (V) VGSRDS(ON) VDS=-10V DRAIN CURRENT ID (A) -2 -3 -4 -5 -6 -7 GATE TO SOURCE VOLTAGE VGS (V) Transfer C h aracteristics Ta=100℃Ta=25℃ ID=-250uA Threshold Voltage THRESHOLD VOLTAGE VTH (V) JUNCTION TEMPERATURE TJ (℃) +86-769-22857832 huixin@hxkj.hk Rev.01 Page 3 of 4

+86-769-22857832 huixin@hxkj.hk Rev.01 Page 4 of 4 Package Outline SOT-23 1.20 0.89 2.04 1.78 0.51 0.30 0.19 0.08 3.10 2.70 1.40 1.20 2.64 2.20 0.100 0.013 0.50 0.20