BSS83

BSS83 PHILIPS | Alldatasheet

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Product specification File under Discrete Semiconductors, SC07 April 1991 DISCRETE SEMICONDUCTORS BSS83 MOSFET N-channel enhancement switching transistor

Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83

DESCRIPTION

Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate.

APPLICATIONS

• analog and/or digital switch
• switch driver PINNING Note 1. Drain and source are interchangeable. 1 = substrate (b) 2 = source 3 = drain 4 = gate Marking code: BSS83 = M74 Fig.1 Simplified outline and symbol. handbook, halfpage MAM389Top view g d b s QUICK REFERENCE DATA Drain-source voltage V DS max. 10 V Source-drain voltage V SD max. 10 V Drain-substrate voltage V DB max. 15 V Source-substrate voltage V SB max. 15 V Drain current (DC) I D max. 50 mA Total power dissipation up to Tamb =2 5°CP tot max. 230 mW Gate-source threshold voltage VDS =V GS ;VSB =0 ; VGS(th) > 0.1 V ID =1 µA < 2.0 V Drain-source ON-resistance VGS = 10 V; VSB = 0; ID = 0.1 mA R DSon < 45 Ω Feed-back capacitance VGS =V BS = −15 V; VDS = 10 V; f = 1 MHz C rss typ. 0.6 pF

Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE Drain-source voltage V DS max. 10 V Source-drain voltage V SD max. 10 V Drain-substrate voltage V DB max. 15 V Source-substrate voltage V SB max. 15 V Drain current (DC) I D max. 50 mA Total power dissipation up to Tamb =2 5°C (1) Ptot max. 230 mW Storage temperature range T stg −65 to+ 150 °C Junction temperature T j max. 125 °C From junction to ambient in free air(1) R th j-a = 430 K/W

Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 CHARACTERISTICS Tamb =2 5°C unless otherwise specified Note 1. Device mounted on a ceramic substrate of 8 mm× 10 mm × 0,7 mm. Drain-source breakdown voltage VGS =V BS = −5 V; ID = 10 nA V (BR)DSX > 10 V Source-drain breakdown voltage VGD =V BD = −5 V; ID = 10 nA V (BR)SDX > 10 V Drain-substrate breakdown voltage VGB = 0; ID = 10 nA; open source V (BR)DBO > 15 V Source-substrate breakdown voltage VGB = 0; ID = 10 nA; open drain V (BR)SBO > 15 V Drain-source leakage current VGS =V BS = −2 V; VDS = 6,6 V I DSoff < 10 nA Source-drain leakage current VGD =V BD = −2 V; VSD = 6,6 V I SDoff < 10 nA Forward transconductance at f = 1 kHz VDS = 10 V; VSB = 0; ID = 20 mA gfs > 10 mS typ. 15 mS Gate-source threshold voltage VDS =V GS ; VSB = 0; ID = 1µA VGS(th) > 0,1 V < 2,0 V Drain-source ON-resistance ID = 0,1 mA; VGS = 5 V; VSB =0 R DSon < 70 Ω VGS = 10 V; VSB =0 R DSon < 45 Ω VGS = 3,2 V; VSB = 6,8 V (see Fig.4) R DSon typ. 80 Ω < 120 Ω Gate-substrate zener voltages VDB =V SB =0 ;−IG =1 0µAV Z(1) > 12,5 V VDB =V SB =0 ;+IG =1 0µAV Z(2) > 12,5 V Capacitances at f = 1 MHz VGS =V BS = −15 V; VDS = 10 V Feed-back capacitance C rss typ. 0,6 pF Input capacitance C iss typ. 1,5 pF Output capacitance C oss typ. 1,0 pF Switching times (see Fig.2) VDD = 10 V; Vi=5 V t on typ. 1,0 ns toff typ. 5,0 ns

Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 Pulse generator: R i =5 0 Ω tr < 0,5 ns tf < 1,0 ns tp =2 0 n s δ< 0,01 Fig.2 Switching times test circuit and input and output waveforms. handbook, full pagewidth MBK296 INPUT OUTPUT tr 90% 10% 10% 90% 90% 10% 90% 10% tf toffton MBK297 630 Ω 50 Ω 0.1 µF T.U.T 50 Ω Vi VDD Vo Fig.3 VSB = 0; typical values. Tj=2 5°C. handbook, halfpage 04 1 2 ID (mA) VDS (V)8 MDA250 VGS = 4.5 V 4 V 3.5 V 3 V 2.5 V 2 V Fig.4 VSB = 6,8 V; typical values. Tj=2 5°C. handbook, halfpage 0 40 120 1.2 0.4 0.8 ID (mA) VDSon (mV)80 MDA251 VGS = 10 V 5 V 4 V 3 V 2 V 3.2 V

Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 Fig.5 VDS = 10 V; VBS = 0; typical values. Tj=2 5°C. handbook, halfpage 012 4 MDA252 ID (mA) VGS (V) Fig.6 VDS =V GS =V GS(th). Tj=2 5°C. handbook, halfpage

4 V 12 V

2 VGSth (V)

(mA) MDA253 VSB = 0 V 8 V Fig.7 VSB = 0; typical values. Tj=2 5°C. handbook, halfpage VDSon (mV) 100 1.2 0.4 0.8 20 40 60 80 MDA254 ID (mA) VGS =

10 V 5 V 4 V 3 V 2 V

Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 PACKAGE OUTLINE UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143B 97-02-28 0 1 2 mm scale Plastic surface mounted package; 4 leads SOT143B D H E E AB v M A X A Lp Q detail X c y w M e B bp

Philips Semiconductors Product specification MOSFET N-channel enhancement switching transistor BSS83 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.