BSS80 KEXIN | Alldatasheet
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Features
High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol BSS80 BSS82 Unit Collector-emitter voltage V CEO 40 60 V Collector-base voltage V CBO V Emitter-base voltage V EBO V Collector current I C mA Peak collector current I CM A Base current I B mA Peak base current I BM mA Total power dissipation,TS =7 7 Ptot mW Junction temperature T j Storage temperature T stg Junction - soldering point R thJS K/W 330 150 - 6 5t o+ 1 5 0 220 800 200 100
www.kexin.com.cn2 SMD Type ICSMD Type Transistors BSS80,BSS82 hFE Classification TYPE Rank B C Marking CHs CJs TYPE Rank B C Marking CLs CMs BSS80 BSS82 Electrical Characteristics Ta = 25 Symbol Testconditons Min Typ Max Unit BSS80 40 BSS82 60 Collector-base breakdown voltage V (BR)CBO IC =1 0ì A ,IE =0 6 0 V V(BR)EBO IE =1 0ì A ,IC =0 5 V VCB =5 0V ,IE = 0 10 nA VCB =5 0V ,IE =0,T A = 150 10 ìA IEBO VEB =3V ,I C = 0 10 nA BSS80/82B 40 BSS80/82C 75 BSS80/82B 40 BSS80/82C 100 BSS80/82B 40 BSS80/82C 100 BSS80/82B 40 120 BSS80/82C 100 300 BSS80/82B 40 BSS80/82C 50 I C = 150 mA, IB =1 5m A 0 . 4 IC = 500 mA, IB =5 0m A 1 . 6 IC = 150 mA, IB =1 5m A 1 . 3 IC = 500 mA, IB =5 0m A 2 . 6 fT IC =2 0m A ,VCE = 20 V, f = 100 MHz 250 MHz Ccb V CB =1 0V ,f=1M H z 6 p F td VCC =3 0V ,IC = 150 mA, IB1 =1 5m A , VBE(off) =0 . 5V 10 ns tr VCC =3 0V ,IC = 150 mA, IB1 =1 5m A , VBE(off) =0 . 5V 40 ns tstg V CC =3 0V ,IC = 150 mA, IB1 =I B2 = 15 mA, 80 ns tf V CC =3 0V ,IC = 150 mA, IB1 =I B2 = 15 mA, 30 ns * Pulse test: t 300ìs, D = 2%. IC = 100 ìA, VCE =1 0V IC =1m A ,VCE =1 0V IC =1 0m A ,VCE =1 0VDC current gain * h FE IC = 500 mA, VCE =1 0V Rise time Storage time Fall time Delay time Emitter-base breakdown voltage ICBOCollector cutoff current Base-emitter saturation voltage * V BE(sat) Emitter cutoff current Transition frequency Collector-base capacitance IC = 150 mA, VCE =1 0V Collector-emitter saturation voltage * V CE(sat) V V(BR)CEO IC =1 0m A ,IB =0 V Parameter Collector-emitter breakdown voltage