BSS64LT1G ONSEMI | Alldatasheet

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  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Base Voltage VCBO 120 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction−to−Ambient R/C0113JA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient R/C0113JA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com SOT−23 (TO−236) CASE 318 STYLE 6 Device Package Shipping †

ORDERING INFORMATION

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. BSS64LT1G SOT −23 (Pb−Free) 3,000 / Tape & Reel *Date Code orientation and/or overbar may vary depending upon manufacturing location. AM M /C0071 /C0071 AM = Device Code M = Date Code* /C0071= Pb−Free Package (Note: Microdot may be in either location) MARKING DIAGRAM COLLECTOR BASE EMITTER

http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 4.0 mAdc) V(BR)CEO 80 − Vdc Collector−Base Breakdown Voltage (IC = 100 /C0109Adc) V(BR)CBO 120 − Vdc Emitter−Base Breakdown Voltage (IE = 100 /C0109Adc) V(BR)EBO 5.0 − Vdc Collector Cutoff Current (VCE = 90 Vdc) (TA = 150°C) ICBO 0.1 500 /C0109Adc Emitter Cutoff Current (VEB = 4.0 Vdc) IEBO − 200 nAdc ON CHARACTERISTICS DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) HFE 20 − Collector−Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 /C0109Adc) (IC = 50 mAdc, IB = 15 mAdc) VCE(sat) 0.15 0.2 Vdc Forward Base−Emitter Voltage VBE(sat) − − − SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz) fT 60 − MHz Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) Cob − 20 pF

http://onsemi.com PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318 −01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. /C0466mm inches/C0467SCALE 10:1 0.8 0.031 0.9 0.035 0.95 0.0370.95 0.037 2.0 0.079 VIEW C L 0.25 /C0113 e E E b A SEE VIEW C DIM A MIN NOM MAX MIN MILLIMETERS 0.89 1.00 1.11 0.035 INCHES A1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 NOM MAX H c *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. BSS64LT1/D PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative