BSS64 KEC | Alldatasheet

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  1. 6. 15 SEMICONDUCTOR TECHNICAL DATA BSS64 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 1 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. MAXIMUM RATING (Ta=25ᴱ) DIM MILLIMETERS 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 G 1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55

0.20 MIN

1.00+0.20/-0.10 M J K E H G A N C B D

1.30 MAX

L L P P P ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) Type Name Marking Lot No. CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO V Emitter-Base Voltage VEBO V Collector Current IC 100 mA Emitter Current IE -100 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 ᴱ Storage Temperature Range Tstg -65ᴕ150 ᴱ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage V(BR)CEO IC=4mA, IB=0 V Collector-Base Breakdown Voltage V(BR)CBO IC=100ỌA, IE=0 120 V Emitter-Base Breakdown Voltage V(BR)EBO IE=100ỌA, IC=0 5.0 V Collector Cut-off Current ICBO VCB=90V, IE=0 100 nA VCB=90V, IE=0, Ta=150ᴱ ỌA Emitter Cut-off Current IEBO VEB=5V, IC=0 200 nA DC Current Gain hFE VCE=1V, IC=1mA VCE=1V, IC=4mA VCE=1V, IC=10mA VCE=1V, IC=20mA Base-Emitter Saturation Voltage VBE(sat) IC=4mA, IB=0.4mA 1.2 V Collector-Emitter Saturation Voltage VCE(sat) IC=4mA, IB=0.4mA 0.15 V IC=50mA, IB=15mA 0.2 Transition Frequency fT VCE=10V, IC=4mA, f=100MHz MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz 5.0 pF