BSS64 KEXIN | Alldatasheet
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NPN general purpose amplifier Absolute Maximum Ratings Ta = 25unless otherwise noted Parameter Symbol Rating Unit Collector-emitter voltage V CE0 80 V Collector-base voltage V CBO 120 V Emitter-base voltage V EBO 5V Collector current I C 200 mA Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 Total device dissipation Derate above 25 PD 350 2.8 mW mW/ Thermal resistance, junction to ambient R èJA 357 /W Marking Marking U3 Electrical Characteristics Ta = 25 unless otherwise noted Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage V (BR)CEO IC =4 . 0m A ,IB =0 8 0 V Collector-base breakdown voltage V (BR)CBO IC = 100 ìA, IE = 0 120 V Emitter-base breakdown voltage V (BR)EBO IE = 100 ìA, IC =0 5 V VCB =9 0V ,IE =0 0 . 1 ì A VCB =9 0V ,IE =0 ,TA = 150 50 ìA Emitter-base cut-off current I EBO VEB =5 . 0V ,IC = 0 200 nA DC current gain h FE IC =1 0m A ,VCE =1 . 0V 2 0 IC =4 . 0m A ,IB = 400ìA 0.15 V IC =5 0m A ,IB =1 5m A 0 . 2 V Base-emitter saturation voltage V BE(sat) IC =4 . 0m A ,IB = 400 ìA 1.2 V Current gain - bandwidth product f T IC =4 . 0m A ,VCE = 10,f = 35 MHz 60 MHz Output capacitance C ob VCB =1 0V ,f=1 . 0M H z 5 p F Collector-cutoff current I CBO Collector-emitter saturation voltage V CE(sat)