BSS64

BSS64 FAIRCHILD | Alldatasheet

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NPN General Purpose Amplifier BSS64 Absolute Maximum Ratings* TA = 25°C unless otherwise noted This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units *BSS64 PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient 357 °C/W C E BSOT-23 Mark: U3 *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.  1997 Fairchild Semiconductor Corporation BSS64

NPN General Purpose Amplifier (continued) Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 4.0 mA, IB = 0 80 V V(BR)CBO Collector-Base Breakdown VoltageIC = 100 µA, IE = 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 5.0 V ICBO Collector-Cutoff Current V CB = 90 V, IE = 0 VCB = 90 V, IE = 0, TA = 150°C 0.1 µA µA IEBO Emitter-Cutoff Current V EB = 5.0 V, IC = 0 200 nA ON CHARACTERISTICS hFE DC Current Gain I C = 10 mA, VCE = 1.0 V 20 VCE(sat) Collector-Emitter Saturation VoltageIC = 4.0 mA, IB = 400 µA IC = 50 mA, IB = 15 mA 0.15 0.2 V V VBE(sat) Base-Emitter Saturation Voltage IC = 4.0 mA, IB = 400 µA 1.2 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 4.0 mA, VCE = 10, f = 35 MHz

60 MHz

C ob Output Capacitance V CB = 10 V, f = 1.0 MHz 5.0 pF Spice Model Vtf=5 Xtf=8 Rb=10) Typical Characteristics BSS64 Typical Pulse d Current Ga in vs Collector Current 0 .1 0 .2 0 .5 1 2 5 10 20 50 1 00 10 0 15 0 20 0 25 0 I - COLLECTOR CUR RENT (mA) h - TYPICAL PULSED CURRENT GAIN C FE 125 °C 25 °C - 40 °C V = 5VCE Collector-Emitter Saturation Voltage vs Collector Current 11 0 1 0 0 2 0 0 0.1 0.2 0.3 0.4 0.5 I - COLLECTOR CURRENT (mA) V - C OLLECTOR EMIT TER VOLT AGE (V)C CE SAT 25 °C - 40 °C 125 °C β = 10

Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 0.1 1 10 100 1000 160 180 200 220 240 260 RESISTANCE (k ) BV - BREAKDOWN VOLTAGE (V)Ω CER I = 1.0 mAC Input and Output Capacitance vs Reverse Voltage 0.1 1 10 100 V - COLLECTOR VOL TAGE (V) CAPACITANCE (pF) C f = 1.0 MHz CE C cb ib Small Signal Current Gain vs Collector Current 11 0 5 0 I - COLLECTOR CURRENT (mA) h - SMALL SIGNAL CURRENT GAIN C FE FREG = 20 MHz V = 10VCE Collector-Cutoff Current vs. Ambient Temperature 25 50 75 1 00 1 25 T - AMBI ENT TEMPERATURE ( C) I - COLL ECTOR CURRENT (nA) A CBO V = 10 0VCB Base-Emitter Saturation Voltage vs Collector Current 11 0 1 0 0 2 0 0 0.2 0.4 0.6 0.8 I - COLLECTOR CU RR EN T (mA ) V - B ASE EMIT TER VOLT AGE (V) C BE SAT β = 10 25 °C - 40 °C 125 °C Base Emitter ON Voltage vs Collector Current 0.1 1 1 0 10 0 20 0 0.2 0.4 0.6 0.8 I - COLLECTOR CU RR EN T (mA ) V - BA SE EMITTER ON VOLT AGE (V) C BEON V = 5VCE 25 °C - 40 °C 125 °C BSS64 NPN General Purpose Amplifier (continued)

Typical Characteristics (continued) Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 100 150 200 250 300 350 TEMPERATURE ( C) P - POWER DISSIPATION (mW) D o SOT-23 BSS64 NPN General Purpose Amplifier (continued)

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Rev. G ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E 2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST SyncFET™ TinyLogic™ UHC™ VCX™