BSS64 DIOTEC | Alldatasheet
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1) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 16 01.11.2003 2.5 max 1.3 ±0.1 1.1 2.9 ±0.1 0.4 1 2 Type Code 1.9 BSS 64 Switching Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/g47C) Grenzwerte (TA = 25/g47C) BSS 64 Collector-Emitter-voltage B open V CE0 80 V Collector-Base-voltage E open V CB0 120 V Emitter-Base-voltage C open V EB0 5 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (dc) I C 100 mA Peak Collector current – Kollektor-Spitzenstrom I CM 250 mA Peak Base current – Basis-Spitzenstrom I BM 100 mA Junction temp. – Sperrschichttemperatur T j 150/g47C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /g47C Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 90 V I CB0 – – 100 nA IE = 0, VCB = 90 V, Tj = 150/g47CI CB0 – – 50 /g58A Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V I EB0 – 1 nA 200 nA Collector saturation volt. – Kollektor-Sättigungsspg. 1) IC = 4 mA, IB = 0.4 mA V CEsat – – 150 mV IC = 50 mA, IB = 15 mA V CEsat – – 200 mV
1) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 2) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 1701.11.2003 Switching Transistors BSS 64 Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 1 V, IC = 1 mA h FE –6 0– VCE = 1 V, IC = 10 mA h FE 20 80 – VCE = 1 V, IC = 20 mA h FE –5 5– Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 25 mA, f = 100 MHz f T 60 MHz 105 MHz – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz C CB0 – 3 pF – Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2) Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren BSS 63 Marking - Stempelung BSS 64 = AM