BSS63 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

SMALL SIGNAL PNP TRANSISTOR n SILICON EPITAXIAL PLANAR PNP TRANSISTORS n MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS n GENERAL PURPOSE LOW FREQUENCY APPLICATONS n NPN COMPLEMENT IS BSS64 INTERNAL SCHEMATIC DIAGRAM March 1996 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (VBE = 0) -110 V V CEO Collector-Emitter Voltage (IB = 0) -100 V V EBO Emitter-Base Voltage (IC =0 ) - 6 V IC Collector Current -0.1 A ICM Collector Peak Current -0.2 A P tot Total Dissipation at Tc =2 5 oC2 0 0 m W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC SOT-23 Type Marking BSS63 T3

R thj-amb • R thj-SR • Thermal Resistance Junction-Ambient Max Thermal Resistance Junction-Substrate Max 620 500 oC/W oC/W

  • Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE =0 ) V CB =- 9 0V V CB =- 9 0V T j =1 5 0oC -100 -50 nA µ A IEBO Emitter Cut-off Current (IC =0 ) V EB = -5 V -200 nA V (BR)CBO ∗ Collector-Base Breakdown Voltage (IE =0 ) IC =- 1 0µ A- 1 1 0 V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage B =0 ) IC = -10 mA -100 V V (BR)EBO Emitter-Base Breakdown Voltage C =0 ) IE =- 1 0µ A- 6 V V CE(sat)∗ Collector-Emitter Saturation Voltage IC =- 2 5m A IB =- 2 . 5m A IC =- 7 5m A IB =- 7 . 5m A -0.25 -0.9 V V V BE(sat)∗ Emitter-Base Saturation Voltage IC =- 2 5m A IB =- 2 . 5m A - 0 . 9 V hFE ∗ DC Current Gain I C =- 1 0m A V CE =- 1V IC =- 2 5m A V CE =- 1V fT Transition Frequency I C =- 2 5m A VCE = -5 V f = 100 MHz 50 MHz C CB Collector Base Capacitance IE =0m A V CB =- 1 0V f=1 M H z 3 p F ∗ Pulsed: Pulse duration = 300µs, duty cycle≤ 2% BSS63

DIM. mm mils A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B SOT-23 MECHANICAL DATA BSS63

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabilit y for the consequences of use of such information nor for any infringemen t of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectr onics. Specifications mention ed in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectr onics products are not authorized for use as critical compon ents in life supportdevices or systems withoutexpre ss written approval of SGS-THOMSON Microelectonics.  1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserve d SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A BSS63