BSS63 KEC | Alldatasheet

Document overview

  • PDF pages: 1

Technical content

  1. 6. 15 SEMICONDUCTOR TECHNICAL DATA BSS63 EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 1 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. MAXIMUM RATING (Ta=25ᴱ) DIM MILLIMETERS 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 G 1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55

0.20 MIN

1.00+0.20/-0.10 M J K E H G A N C B D

1.30 MAX

L L P P P ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) Type Name Marking Lot No. CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -100 V Collector-Base Breakdown Voltage V(BR)CBO IC=-10ỌA, IE=0 -110 V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10ỌA, IC=0 V Collector Cut-off Current ICBO VCB=-90V, IE=0 -100 nA VCB=-90V, IE=0, Ta=150ᴱ -50 ỌA Emitter Cut-off Current IEBO VEB=-5V, IC=0 -200 nA DC Current Gain hFE VCE=-1V, IC=-10mA VCE=-1V, IC=-25mA Base-Emitter Saturation Voltage VBE(sat) IC=-25mA, IB=-2.5mA -0.9 V Collector-Emitter Saturation Voltage VCE(sat) IC=-25mA, IB=-2.5mA -0.25 V IC=-75mA, IB=-7.5mA -0.9 Transition Frequency fT IC=-25mA, VCE=-5V, f=100MHz MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz pF CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -110 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO V Collector Current IC -100 mA Emitter Current IE 100 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 ᴱ Storage Temperature Range Tstg -65ᴕ150 ᴱ