BSS63 KEXIN | Alldatasheet
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PNP general purpose amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage V CE0 100 V Collector-base voltage V CBO 110 V Emitter-base voltage V EBO 6V Collector current I C 200 mA Junction temperature T j 150 Storage temperature T stg - 5 5t o+ 1 5 0 Total device dissipation Derate above 25 PD 350 2.8 mW mW/ Thermal resistance, junction to ambient R èJA 357 /W Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-emitter breakdown voltage V (BR)CEO IC =1 0 0ì A ,IB =0 1 0 0 V Collector-base breakdown voltage V (BR)CBO IC =1 0ì A ,IE =0 1 1 0 V Emitter-base breakdown voltage V (BR)EBO IE =1 . 0ì A ,IC =0 6 V VCB =9 0V ,IE = 0 100 nA VCB =9 0V ,IE =0 ,TA =1 5 0 50 ìA Emitter-base cut-off current I EBO VEB =6 . 0V ,IC = 0 200 nA IC =1 0m A ,VCE =1 . 0V 3 0 IC =2 5m A ,VCE =1 . 0V 3 0 Collector-emitter saturation voltage V CE(sat) IC =2 5m A ,IB =2 . 5m A 0 . 2 5 V Base-emitter saturation voltage V BE(sat) IC =2 5m A ,IB =2 . 5m A 0 . 9 V Current gain - bandwidth product f T IC =2 5m A ,VCE = 5.0,f = 35 MHz 50 MHz DC current gain h FE ICBOCollector-cutoff current Marking Marking T3