BSS63

BSS63 FAIRCHILD | Alldatasheet

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 1997 Fairchild Semiconductor Corporation PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. BSS63 Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 110 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C C E BSOT-23 Mark: T3 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units *BSS63 PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient 357 °C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. BSS63 NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Vtf=0 Xtf=0 Rb=10) Typical Characteristics Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown VoltageIC = 100 µA, IB = 0 100 V V(BR)CBO Collector-Base Breakdown VoltageIC = 10 µA, IE = 0 110 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 1.0 µA, IC = 0 6.0 V ICBO Collector-Cutoff Current V CB = 90 V, IE = 0 VCB = 90 V, IE = 0, TA = 150°C 100 nA µA IEBO Emitter-Cutoff Current V EB = 6.0 V, IC = 0 200 nA ON CHARACTERISTICS hFE DC Current Gain I C = 10 mA, VCE = 1.0 V IC = 25 mA, VCE = 1.0 V VCE(sat) Collector-Emitter Saturation Voltage IC = 25 mA, IB =2.5 mA 0.25 V VBE(sat) Base-Emitter Saturation Voltage IC = 25 mA, IB =2.5 mA 0.9 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 25 mA, VCE = 5.0, f = 35 MHz

50 MHz

Vtf=0 Xtf=0 Rb=10) NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Typical Pulsed Current Gain vs Collector Current 0. 000 1 0 .00 1 0.0 1 0 .1 1 10 0 15 0 20 0 I - COLLEC TOR CU RR ENT (A) h - TYPICAL PULSED CURRENT GAIN FE - 40 °C 25 °C C V = 5VCE 125 °C Collector-Emitter Saturation Vol tag e vs Col lecto r C urr en t 0.1 1 10 100 0.1 0.2 0.3 0.4 I - COLLEC TOR C URR ENT (m A) V - COLLECTOR-EMITTER VOL TAGE (V) CESAT C β = 1 0 125 °C - 40 °C 25 °C PNP General Purpose Amplifier (continued) BSS63

PNP General Purpose Amplifier (continued) Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 0.1 1 10 100 1000 170 180 190 200 210 220 RESISTANCE (k ) BV - BREAKDOWN VOLT AGE (V)Ω CER Input and Output Capacitance vs Reverse Voltage 0.1 1 10 100 V - REVERSE BIAS VOLTAGE(V) CAPACIT ANCE (pF) C f = 1.0 MHz R C cb eb BSS63 Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 100 150 200 250 300 350 TEMPERATURE ( C) P - POWER DISSIPATION (mW) D o SOT-23 Base-Emitter ON Voltage vs Collector Current 0.1 1 10 100 0.2 0.4 0.6 0.8 I - COLLEC TOR C URR ENT (m A) V - BASE-E MITTER ON VOLTAGE (V) BE(O N) 125 °C - 40 °C 25 °C C V = 5VCE Base-Emitter Saturation Voltage vs Coll ector Curr ent 0.1 1 10 1 00 0.2 0.4 0.6 0.8 I - COLLECTOR CURRENT (mA ) V - BASE-EMITTER VOLTA GE (V) BE SAT C β = 10 125 °C - 40 °C 25 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 1 00 125 150 0.1 10 0 T - AM BI EN T TE MPE RATU R E ( C ) I - C OLLECTOR CU RRENT (nA) A V = 100VCB CBO

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Rev. G ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E 2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST SyncFET™ TinyLogic™ UHC™ VCX™