BSS63 DIOTEC | Alldatasheet
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1) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 14 01.11.2003 2.5 max 1.3 ±0.1 1.1 2.9 ±0.1 0.4 1 2 Type Code 1.9 BSS 63 Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/g47C) Grenzwerte (TA = 25/g47C) BSS 63 Collector-Emitter-voltage B open - V CE0 100 V Collector-Base-voltage E open - V CB0 110 V Emitter-Base-voltage C open - V EB0 6 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (dc) - I C 100 mA Peak Collector current – Kollektor-Spitzenstrom - I CM 100 mA Peak Base current – Basis-Spitzenstrom - I BM 100 mA Junction temp. – Sperrschichttemperatur T j 150/g47C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /g47C Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 90 V - I CB0 – – 100 nA IE = 0, - VCB = 90 V, Tj = 150/g47C- I CB0 – – 50 /g58A Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 6 V - I EB0 – – 100 nA Collector saturation volt. – Kollektor-Sättigungsspg. 1) - IC = 25 mA, - IB = 2.5 mA - V CEsat – – 250 mV Base saturation voltage – Basis-Sättigungsspannung 1) - IC = 25 mA, - IB = 2.5 mA - V BEsat – – 900 mV
1) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 2) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 1501.11.2003 Switching Transistors BSS 63 Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 1) - VCE = 1 V, - IC = 10 mA h FE 30 – – - VCE = 1 V, - IC = 25 mA h FE 30 – – Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 25 mA, f = 100 MHz f T 50 MHz 85 MHz – Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE = ie = 0, f = 1 MHz C CB0 – 3 pF – Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2) Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BSS 64 Marking - Stempelung BSS 63 = BM