BSS44_00 STMICROELECTRONICS | Alldatasheet
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Technical content
■ STMicroelectronics PREFERRED SALESTYPE ■ PNP TRANSISTOR
DESCRIPTION
The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications up to 5 A. INTERNAL SCHEMATIC DIAGRAM December 2000 TO-39 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE = 0) - 65 V V CEO Collector-Emitter Voltage (IB = 0) - 60 V V EBO Emitter-Base Voltage (IC = 0) - 6 V IC Collector Current - 5 A P tot Total Dissipation at Tcase ≤ 25 oC Tamb ≤ 25 oC 0.87 W W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC
Thermal Resistance Junction-case Max Thermal Resistance Junction-amb Max 200 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE =0) V CE = -60 V -0.5 µ A V (BR)CBO ∗ Collector-base Breakdown Voltage E = 0) IC = -1 mA -65 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage B = 0) IC = -50 mA -60 V V EBO ∗ Emitter-base Voltage (IC = 0) IE =.- 1 mA -6 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = -0.5 A IB = -50 mA IC = - 5 A IB = -0.5 A -0.1 -0.4 -1 V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = -0.5 A IB = -50 mA IC = - 5 A IB = -0.5 A -0.8 -1.1 -1.6 V V hFE ∗ DC Current Gain I C = -0.5 A VCE = -2 V IC = -2 A VCE = -2 V IC = -5 A VCE = -2 V 40 70 fT ∗ Transition Frequency I C = -0.5 A VCE = -5 V 80 MHz C CBO Collector-base Capacitance IE = 0 VCB = 10 V f = 1 MHz 100 pF ton Turn-on Time IC = -0.5 A V CC = -20 V IB1 = -IB2 = -50 mA 0.065 µ s toff Turn-off Time 0.45 µ s ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % BSS44
DIM. mm inch A 12.7 0.500 B0 . 4 9 0 . 0 1 9 D6 . 6 0 . 2 6 0 E8 . 5 0 . 3 3 4 F9 . 4 0 . 3 7 0 G 5.08 0.200 H1 . 2 0 . 0 4 7 I0 . 9 0 . 0 3 5 L4 5 o (typ.) L G I D A F E B H P008B TO-39 MECHANICAL DATA BSS44
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