BSS205N DGNJDZ | Alldatasheet
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2.5 2.52 N-Channel Enhancement Mode Field Effect Transistor FEA TURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resist ance and maximum DC current capability Maximum ratings ( Ta=25℃ unless other wise noted) Para meter Symbol Value Unit Drain-S ource Voltage VDS V Gate-Source V oltage VGS ±12 V Conti nuous Drain Current ID A Drain Current-Pulsed ① IDM A Po wer Dissipation PD mW Thermal Resistance from Junction to Ambient RθJA ℃/W Operation Junction and Storage Temperature Range ℃ TJ,TSTG -55~ +150 MARKING Equivalent Circuit APPL ICATION z Load/Power Switching z Interfacing Switching V(BR )DSS RDS(o n)MAX ID 35mΩ@10V A 52mΩ@2.5V 40mΩ@4.5V SOT-23 1. GA TE 2. SOURCE 3. DRAIN SOT -23 Plastic-Encapsulate MOSFETS SOT -23 Plastic-Encapsulate MOSFETS A09T Dongguan Nanjing Electronics Ltd. www.dgnjdz.com1/5 BSS205N 250 All data s heet.com
=2.5A 420 100 Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-source breakdown voltage V(B R) DSS VGS = 0V, ID =250µA 0 V Z ero gate voltage drain current ID SS VDS = V,VGS = 0V,TJ=25℃ 1 µA Gate-source l eakage current I GSS VGS =±12V, VDS = 0V ±10 0 nA On characteristics VGS = 10V, ID 35 mΩ VGS =4.5V, ID 40 mΩ Drain-source on-resistance ② RDS (on) VGS =2.5V, ID 52 mΩ Forward transconductance gFS VDS =5V, ID = 8 S Gate threshol d voltage VGS( th) VDS =VGS, ID =250µA 0.7 V Dynamic Characteristics ③ Input cap acitance Ciss pF Output capac itance Coss pF Revers e transfer capacitance C rss VDS = V,VGS =0V,f =1MHz pF Gate resistance Rg V DS =0 V,VGS = 0V,f =1MHz 3.6 Ω Switching Characteristics ③ Turn-on delay time td( on) 5 ns T urn-on rise time tr ns Turn-off delay time td( off) ns T urn-off fall time tf VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω 6 ns Drain -source diode characteristics and maximum ratings Diode forward voltage ② VSD IS=1A,VGS=0V 1 V Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 3. Guaranteed by design, not subject to production testing. MOSFET ELECTRICAL CHARACTERISTICS aT =25 ℃ unless otherwise specified VDS = V,VGS = 0V,TJ=125℃ T otal Gate Charge Qg VDS=10V,ID= VGS= nC Gate-Source Charge Qgs nC Gate-Drain Charge Qgd nC Continuous drain-source diode forward current 5.8 A Pulsed drain-source diode forward current① 30 A IS ISM 0.9 3.3 4.8 Dongguan Nanjing Electronics Ltd. www.dgnjdz.com2/5 20 µA 1.2 315 114 152 16 24 2.5A 3.22.1 0.90.65 0.60.4 4.5V =2.5A =2.5A 11 20 2.5A All data s heet.com
=12V 0.0 25 50 75 100 125 0.0 0.3 0.6 0.9 1.2 1.5 0.1 024 68 1 0 123 456 012 345 VDS Puls ed DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) T ransfer Characteristics TJ=25℃ T hreshold Voltage THRESHOLD VOLTAGE VTH (V) JUNCTION TEM PERATURE TJ ( TJ=125℃ TJ=25℃ VSD Puls ed SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) IS — TJ=125℃ RDS (ON)—— VGS ON-RESISTANCE RDS(ON) (m) GATE TO SOURCE VOLTAGE VGS (V) TJ=25℃ VGS= 2.5V ID=5A Puls ed VGS= 4.5V TJ=25℃ Puls ed ON-RESISTANCE RDS(ON) (m) DRAIN CURRENT ID (A) ID——RDS (ON) VGS= 10V VGS=2V TJ=25℃ Puls ed VGS=1. VGS= 4V,3V,2.5V O utput Characteristics DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) T ypical Characteristics Dongguan Nanjing Electronics Ltd. www.dgnjdz.com3/5 All data s heet.com
A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP SOT-23 Suggested Pad Layout Dongguan Nanjing Electronics Ltd. www.dgnjdz.com4/5 All data s heet.com
30,000 120,000 Dongguan Nanjing Electronics Ltd. www.dgnjdz.com5/5 All data s heet.com