BSS138ADW HUIXIN | Alldatasheet

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PIN CONFIGURATION FEATURES Package: SOT-363 Marking: .SS  Epoxy meets UL 94 V-0 flammability rating  High density cell design for low RDS(ON)  Voltage controlled small signal switch  Rugged and reliable  ESD Protected 2KV HBM

APPLICATIONS

 Direct Logic-Level Interface: TTL/CMOS  Load Switch for Portable Devices  DC/DC Converter ABSOLUTE MAXIMUM RATING (Tamb=25°C) Symbol Parameter Value Units VDS Drain-Source Voltage 50 V VGS Gate-Source Voltage ±20 V ID Drain Current 500 mA IDM Pulsed Drain Current (note 1) 2 A PD Total Power Dissipation 350 mW TJ & TSTG Junction and Storage Temperature -55 to 150 °C RθJA Typical Thermal Resistance from Junction to Ambient 328 °C/W ELECTRICAL CHARACTERISTICS (Tamb=25°C) Symbol Parameter Test Condition Min Typ Max Units V(BR)DSS Drain-Source Voltage Breakdown Voltage VGS=0V, ID=250uA 50 V VGS(th) Gate-Threshold Voltage V DS= VGS, ID=250uA 0.8 1.0 1.2 V IDSS Zero Gate Voltage Drain Current V DS=50V, VGS=0V 1 μA IGSS Gate-Body Leakage V DS=0V, VGS=±20V ±2 μA RDS(on) Drain-Source On-Resistance (note 2) VGS=1.8V, ID=10mA VGS=2.5V, ID=200mA VGS=4.5V, ID=200mA VGS=10V, ID=500mA 1.2 1.1 2.0 1.5 Ω VSD Diode Forward Voltage V GS=0V, IS=0.5A 0.5 1.35 V gFS Forward Transconduc tance (note 2) V DS=10V, ID=0.2A 100 ms 6GMK1UL5

Dynamic Characteristics (Tamb=25°C) Symbol Parameter Test Condition Min Typ Max Units Rg Gate Resistance V DS=0V, f=1MHZ 12 Ω Qg Total Gate Charge VDS=30V, VGS=10V, ID=0.3A (Note 1,2) 1 . 6 nC Qgs Gate-Source Charge 0.38 Qgd Gate-Drain Charge 0.24 Ciss Input Capacitance VDS=10V VGS=0V f=1MHZ 3 4 pF Coss Output Capacitance 13 Crss Reverse Transfer Capacitance 4 Switching Characteristics (Tamb=25°C) Symbol Parameter Test Condition Min Typ Max Units td(on) Turn on Delay Time VDD=30V, VGS=10V, RG=6Ω, ID=0.3A (Note 1,2) 3 . 2 5 nS tr Turn-on Rise Time 2.8 5 td(off) Turn off Delay Time 11.6 20 tf Turn-off Fall Time 40 60 Note: 1.Repetitive rating, pulse width limited by junction temperatur e TJ(MAX)=150°C. Rating are based on low frequency and low duty cycles to keep initial TJ=25°C. 2.Pulse width≤300μS,duty cycle≤2% 3.Essentially independent of operating temperature typical characteristics. 6GMK2UL5

ELECTRICAL CHARACTERISTICS CURVE 6GMK3UL5 Fig1. Typ. output characteristics ( )Drain-Source Voltage-V VDS 0 2 3 4 5 T =25°CJ ( )Drain-Source Current-I AD 0.25 V =2.0VGS 0.50 0.75 1.00 1.25 V =2.25VGS V =2.5VGS V =2.75VGS V =3.0VGS V =3.5VGS Fig2. Transfer Characteristic for Various Junction Temperatures Gate-Source Voltage-V (V)GS ( )Drain-Source Current-I AD 0.5 1.0 2.0 2 3 5 1.5 T =25°CJ T =100°CJ Fig6. On-Resistance vs. Gate-to-Source Voltage 108640 ( )Gate-Source Voltage-V VGS T =25°CA T =125°CA ( )On Resistance -R ΩDS(on) I =350mAD Fig5. Drain-source on-state resistance ( )On Resistance -R ΩDS(on) ( )Junction Temperature-T °CJ 75 125 15010050250 0.5 1.0 1.5 2.0 2.5 V =10VGS I =350mAD V =4.5VGS I =200mAD Fig4. Typical Gate-Charge Gate-Charge-Q (nC)g 0.6 V =30VDS I =300mAD Gate-Source Voltage-V (V)GS ( )Drain-Source Voltage-V VDS 10 20 30 40 50 010 110 210 ( )Capacitance pF Fig3. Typical Capacitance vs. Drain-to-Source Voltage V =0GS f =1MHz Coss Ciss Crss

ELECTRICAL CHARACTERISTICS CURVE 6GMK4UL5 Fig9. Drain-source on-state resistance 1.0 ( )Drain current-I AD 0.80.60.20 ( )On Resistance -R ΩDS(on) 0.4 V =10VGS V =4.0VGS V =3.0VGSV =2.5VGS Fig7. Threshold voltage 75 125 Junction Temperature-T (°C)J 15010050250 2.0 0.8 1.2 1.6 ( )Threshold voltage-V VGS(th) 0.4 I =250μAD ( )Source current- I AS Fig8. Forward characteristic of body diode 0.25 0.9 0.50 1.00 0.3 0.6 1.2 0.75 ( )Source-Drain Voltage-V VSD T =25°CJT =125°CJ Drain-Source Voltage-V (V)DS Drain-Source Current-I (A)D 10.1 10 100 0.1ms 100ms DC R LimitedDS(on) Fig11. Safe Operating Area -310 -210 -110 010 110 10ms 1ms Fig12. Normalized Thermal Transient Impedance Junction-to-Case Rectangular Pulse Duration (sec) 1E-3 1E-2 1E-1 1E0 1E1 Normalized Thermal Impedance 1E-4 Single Pulse 1E-2 1E-1 1E0 0.01 0.02 0.05 0.1 0.2 D=0.5

SOT-363 PACKAGE OUTLINE DIMENSIONS 6GMK5UL5