BSS138 WEITRON | Alldatasheet

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http://www.weitron.com.tw BSS138 Rating Symbol Value Unit VDSS VGS ID IDM PD R JA Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C V V mA mA mW C/W Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Drain Current(tp 10us) Power Dissipation (TA=25 C) Maximax Junction-to-Ambient Maximum Ratings (TA=25 C Unless Otherwise Specified) Device Marking BSS138=J1 Small Signal MOSFET N-Channel GATE SOURCE DRAIN SOT-23 3Features: *Low On-Resistance : 3.5 *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. W q 200 800 225 556

http://www.weitron.com.tw BSS138 Input Capacitance VDS=25V, VGS=0V, f=1MHZ Output Capacitance VDS=25V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHZ Drain-Source Breakdown Voltage VGS=0V, ID=250 A Gate-Source Threshold Voltage VDS=VGS, ID=1.0mA Gate-Source Leakage Current VDS=0V, VGS= 20V Drain-Source On-Resistance VGS=2.75V, ID 200mA, TA=-40 C to + 85 C VGS=5.0V, ID=200mA Forward Transconductance VDS=25V, ID=200mA, f=1.0KHZ Static Dynamic Switching (2) Characteristic Symbol UnitMin Typ Max V(BR)DSS VGS (th) rDS (on) IGSS IDSS gfs Ciss Coss Crss td(on) td(off) 50 - V 0.5 - 1.5 V - -- - - 0.1 0.5 0.1 uA A mS 5.6 3.5 3.5 PF nS Electrical Characteristics (TA=25 C Unless otherwise noted) Zero Gate Voltage Drain Current VDS=25V, VGS=0V VDS=50V, VGS=0V 100 - 5.0 Turn-On Time VDD=30V, ID=200mA Turn-Off Time VDD=30V, ID=100mA (1) + +

T Y P IC A L E L E C T R IC A L C HA R A C T E R IS T IC S RDS(on), DRAIN-TO-SOURCE RESIST ANCE (NORMALIZED) F igure 1. On-R egion C harac teris tic s TJ, JUNCTION TEMPERATURE ( C) F igure 2. Trans fer C harac teris tic s F igure 3. On-R es is tanc e Variation with Temperature VGS = 10 V ID = 0.8 A -55 -5 45 95 145 0.6 0.8 VGS, GATE-T O-SOURCE VOLTAGE (VOLTS) QT, TOTAL GATE CHARGE (pC) 500 VDS = 40 V TJ = 25 C 1000 ID = 200 mA 1500 1.2 1.4 1.6 1.8 VGS = 4.5 V ID = 0.5 A 2000 Vgs(th), VARIANCE (VOLTS) TJ, JUNCTION TEMPERATURE ( C) ID = 1.0 mA -55 -5 45 95 145 0.75 0.875 1.125 1.25 0.3 0.4 0.1 0.6 0.2 F igure 4. T hres hold Voltage Variation with Temperature 1 1.5 2 2.5 3 I D, DRAIN CURRENT (AMPS) VGS, GATE-T O-SOURCE VOLTAGE (VOLTS) F igure 5. G ate C harge VDS = 10 V 150 C 25 C -55 C 3.5 0.5 40 2 4 10 0.3 0.4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) I D, DRAIN CURRENT (AMPS) 0.1 0.6 0.2 0.5 1 3 95 7 VGS = 3.25 V VGS = 2.75 V VGS = 2.5 V VGS = 3.0 V VGS = 3.5 V 0.7 0.8 TJ = 25 C 0.7 0.8 0.9 4.50.50 2.2 -30 20 70 120 2500 3000 WE IT R ONBSS138 WEITRON http://www.weitron.com.tw

T Y P IC A L E L E C T R IC A L C HA R A C T E R IS T IC S RDS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS) F igure 6. On-R es is tanc e vers us Drain C urrent 0 0.1 0.2 F igure 7. On-R es is tanc e vers us Drain C urrent ID, DRAIN CURRENT (AMPS) F igure 8. On-R es is tanc e vers us Drain C urrent 0.001 0.1 F igure 9. On-R es is tanc e vers us Drain C urrent VSD, DIODE FORWARD VOLTAGE (VOLTS) F igure 10. B ody Diode F orward Voltage ID, DIODE CURRENT (AMPS) 25 C VGS = 2.5 V TJ = 150 C 0 0.2 0.4 0.6 0.01 -55 C25 C 0.8 RDS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS) 0 0.1 0.2 ID, DRAIN CURRENT (AMPS) VGS = 2.75 V 120 5 10 Ciss 0.05 0.15 0.25 150 C -55 C 0.05 0.15 0.25 201.0 1.2 150 C 25 C -55 C 100 F igure 1 1. C apac itanc e RDS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS) 0 0.2 0.40.05 2.5 ID, DRAIN CURRENT (AMPS) 25 C VGS = 4.5 V 1.5 RDS(on), DRAIN-TO-SOURCE RESIST ANCE (OHMS) 0 0.2 0.40.05 ID, DRAIN CURRENT (AMPS) VGS = 10 V 0.1 0.3 0.5 150 C -55 C 3.5 4.5 2.5 1.5 0.1 0.3 0.5 150 C 25 C -55 C 4.5 3.5 0.25 0.450.15 0.35 5.5 0.25 0.450.15 0.35 Coss Crss WE IT R ONBSS138 WEITRON http://www.weitron.com.tw