BSS138 SKTECHNOLGY | Alldatasheet
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Technical content
Va ei: SHIKUES N-Channel Enhancement Mode MOSFET Feature © 50V/0.2A, — Rps(on)=3.52(MAX) @Vas=5V. Id =0.2A Rps(on) = 102(MAX) @Vos = 2.75V. Id = 0.2A [| © — Super High dense cell design for extremely low RDs(on) . ASD © Reliable and Rugged. ( p) © Low Threshold Voltage ( 0.5V—I.5V ) Make it Ideal for Low Voltage Applications. : @ — SOT-23 for Surface Mount Package. [e| Is] SOT-23 Ce
Applications
© Power Management in DC/DC Converters, Portable and Battery-powered Products. Absolute Maximum Ratings Ta=25'C_ Unless Otherwise noted [Parameter Symbol] Limit | Units [ Paincunen-continens es Electrical Characteristics Ta=25'C_ Unless Otherwise noted Off Characteristics A Zero-Gate Voltage Drain Current IDSS pA re Gate Body Leakage Current, Forward IGSSF VGS=20V, VDS=0V_ | - | - | 1 | om | incite men toene | we | _vesnanuvossey P| [00 | m | On Characteristics Gate Threshold Voltage VGS= VDS, ID=1.0 mA Dos [ - Jos Tv | Static Drain-source VGS =5.0V, ID =0.2A Drain-Source Diode Characteristics and Maximum Ratings REV.08 1 of 3
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
2268 Z os
Figure 3. Breakdown Voltage Variation Figure 4. Gate Threshold Variation