BSS138 SHUNYE | Alldatasheet

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z High density cell design for extremely low R DS(on) z Rugged and Relaible Maximum ratings (T a =25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS 5 0 Continuous Gate-Source Voltage V GSS ±20 V Continuous Drain Current I D 0.22 A Power Dissipation P D 0.35 A Thermal Resistance from Junction to Ambient R θ JA 357 Operation Junction and Storage Temperature Range T j T s tg -55 ~+150 SO T -23 1. GATE 2. SOURCE 3. DRAIN M ARKING Equivalent Circuit Direct Logic- Level Interface: TT L/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Soli d-State Relays APPLICA TION z z z z V (BR)DSS R DS(on) MAX I D V 3.5 Ω V 220 m A Ω W I D M Pulsed Drain Current (tp=10us) SS Dev ice c ode BSS138 N C h a nne l V D S MOSFET www.shunyegroup.com.cn V2.22

n voltage V (BR)DSS V GS = 0V, I D =250µA V Gate-body leak age I GSS V DS =0V, V GS =±20V ±100 nA V DS =50V, V GS =0V 0.5 µA Zero gate volt age drain curren t I DSS V DS =30V, V GS =0V 100 nA On characteristics Gate-threshold voltage (n ote 1) V GS(th) V DS GS , I D =1mA 0.80 1.50 V V GS =10V, I D =0.22A 3.50 Static drain-source on-r esistance (note 1) R DS(on) V GS =4.5V, I D =0.22A Ω Forward transcond uctanc e (note 1) g FS V DS =10V, I D =0.22A 0.12 S Dynamic characte ristics (note 2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss V DS =25V,V GS =0V, f=1MHz pF Switching char act eristics Turn-on dela y time (note 1,2) t d(on) Rise time (note 1,2) t r Turn-off dela y time (note 1,2) t d(off) Fall time (note 1,2) t f V DD =30V, V DS =10V, I D =0.29A, R GEN Ω ns Drain-source body diode characteristics Body diode forwar d vo ltage (note 1) V SD I S =0.44A, V GS = 0V 1.4 V Notes: 1. Pulse Test ; Pulse Wid th 300µs, Duty Cycle 2%. 2. These parameters have no way to verify. a T =25 unless otherwise specified 1.50 0.88 www.shunyegroup.com.cn V2.22 BSS138

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1E-3 0.01 0.1 012345 0.0 0.5 1.0 1.5 2.0 0.2 0.4 0.6 0.8 1.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 02468 1 012345 0.0 0.2 0.4 0.6 0.8 1.0 1.2 100 125 0.0 0.5 1.0 1.5 2.0 Pulsed Pulsed T a =100 V SD I S T a =25 SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGE V SD (V) V GS =10V V GS =5V V GS =4V V GS =3V V GS =3V,4V,5V,6V Output C h aracteristics V GS =2V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) V GS =4.5V T a =25 Pulsed V GS =10V T a =25 Pulsed ON-RESISTANCE R DS(ON) DRAIN CURRENT I D (A) I D R DS(ON) T a =100 T a =25 ON-RESISTANCE R DS(ON) GATE TO SOURCE VOLTAGE V GS (V) V GS R DS(ON) I D =500m A V DS =3V Pulsed DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) T r an sf er C h aract eri stics T a =100 T a =25 I D =250uA Threshold Volt a ge THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T j ( ) www.shunyegroup.com.cn V2.22 BSS138

A 0.9 150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e 1.800 2.000 0.071 0.079 L 0.300 0.500 0.012 0.020 θ

0.550 REF

0.022 REF

0.950 TYP

0.037 TYP

T -23 Package Outline Dimensions SO T -23 Suggested Pad Layout www.shunyegroup.com.cn V2.22 BSS138

www.shunyegroup.com.cn V2.22 REEL Reel Size Box Box Size(mm) Carton Carton Size(mm) G.W.(kg) 3000 pcs 7 inch 30,000 pcs 203×203×195 120,000 pcs 438×438×220 BSS138