BSS138 PANJIT | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

PAGE . 1October 26,2010-REV.00 BSS138

FEATURES

  • RDS(ON), VGS@10V,IDS@500mA=3Ω
  • RDS(ON), VGS@4.5V,IDS@200mA=4Ω
  • RDS(ON), VGS@2.5V,IDS@100mA=6Ω
  • Advanced Trench Process Technology
  • High Density Cell Design For Ultra Low On-Resistance
  • Very Low Leakage Current In Off Condition
  • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
  • ESD Protected
  • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
  • Case: SOT-23 Package
  • Terminals : Solderable per MIL-STD-750,Method 2026
  • Marking : 138
  • Apporx. Weight: 0.0003 ounce, 0.0084 gram 50V N-Channel Enhancement Mode MOSFET - ESD Protected Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted ) Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE PARAMETER Symbol Limit Units Drain-Source Voltage V DS 50 V Gate-Source Voltage V GS +20 V Continuous Drain Current I D 300 mA Pulsed Drain Current 1) IDM 2000 mA Maximum Power Dissipation TA =25 OC TA =75 OC P D 350 210 mW Operating Junction and Storage T emperature Range TJ,T STG -55 to + 150 OC Junction-to Ambient Thermal Resistance(PCB mounted)2 RθJA 357 OC/W 0.120(3.04) 0.110(2.80) 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) 0.004(0.10)MAX. 0.020(0.50) 0.013(0.35) 0.044(1.10) 0.035(0.90) 0.006(0.15)MIN. 0.008(0.20) 0.003(0.08)

PAGE . 2October 26,2010-REV.00 BSS138

ELECTRICAL CHARACTERISTICS

Parameter Symbol T est Condition Min. Typ. Max. Units Static Drain-Source Breakdown Voltage BV DSS VGS =0V , I D =10 μA5 0 - -V Gate Threshold Voltage V GS(th) V DS =V GS , I D=250 μA 0.8 - 1.5 V Drain-Source On-State Resistance RDS(on) VGS=2.5V , I D=100mA - 2.8 6.0 ΩDrain-Source On-State Resistance RDS(on) VGS=4.5V , I D=200mA - 1 .8 4 .0 Drain-Source On-State Resistance RDS(on) VGS=10V , I D=500mA - 1.6 3.0 Zero Gate Voltage Drain Current IDSS VDS=50V , VGS=0V - - 1 μA Gate Body Leakage I GSS V GS =+ 20V , V DS =0V - - + 10 μA Forward Transconductance g fS V DS =10V , I D =250mA 100 - - mS Dynamic T otal Gate Charge Q g V DS =25V, I D =250mA VGS=4.5V -- 1 . 0 n C Turn-On Time t on VDD=30V , RL=100Ω ID=300mA , VGEN=10V RG=6Ω -- 4 0 ns Turn-Off Time t off - - 150 Input Capacitance C iss VDS =25V , V GS =0V f=1.0MH Z -- 5 0 pFOutput Capacitance C oss -- 1 0 Reverse Transfer Capacitance C rss --5 Source-Drain Diode Diode Forward Voltage V SD IS=250mA , VGS=0V - 0.82 1.2 V Continuous Diode Forward Current IS -- - 3 0 0 m A Pulse Diode Forward Current ISM -- - 2 0 0 0 m A

PAGE . 3October 26,2010-REV.00 BSS138 Fig. 1-TYPICAL FORWARD CHARACTERISTICFIG.1- Output CharacteristicFIG.1- Output Characteristic Typical Characteristics Curves (T =25 C,unless otherwise noted)A O Typical Characteristics Curves (T =25 C,unless otherwise noted)A O FIG.2- Transfer Characteristic FIG.3- On Resistance vs Drain CurrentFIG.3- On Resistance vs Drain Current FIG.4- On Resistance vs Gate to Source VoltageFIG.4- On Resistance vs Gate to Source Voltage FIG.5- On Resistance vs Junction TemperatureFIG.5- On Resistance vs Junction Temperature I -Drain-to-Source Current (A)D 012 34 5 0.2 0.4 0.6 0.8 1.0 1.2 3.0V V - Drain-to-Source Voltage (V)DS 0.2 0.4 0.6 0.8 0123456 VDS =10V TJ =2 5oC V - Gate-to-Source Voltage (V)GS I -Drain-to-Source Current (A)D I - Drain Current (A) D V =4.5VGS R - On Resistance ( ) DS(ON) /c87 V =10VGS 02468 1 0 V - Gate-to-Source Voltage (V)GS I =200mAD I =500mAD R - On Resistance ( ) DS(ON) /c87 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 T - Junction Temperature ( C)J O VGS =10 V ID =500mA R -On-Resistance(Normalized) DS(ON) V =10V~4.0VGS

PAGE . 4October 26,2010-REV.00 BSS138 Fig.6 - Gate Charge WaveformFig.6 - Gate Charge Waveform Fig.8 - Threshold Voltage vs TemperatureFig.8 - Threshold Voltage vs Temperature Fig.9 - Breakdown Voltage vs Junction TemperatureFig.9 - Breakdown Voltage vs Junction Temperature Q - Gate Charge (nC) g IAD =250m V - Gate-to-Source Voltage(V) GS Fig.7 Source-Drain Diode Forward VoltageFig.7 Source-Drain Diode Forward Voltage 0.01 0.1 V - Source-to-Drain Voltage (V)SD T= 1 2 5CJ O V= 0 VGS I - Source Current (A)S T= - 5 5CJ O T= 2 5CJ O 0.7 0.8 0.9 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T - Junction Temperature ( C) J O I= 2 5 0AD /c109 0.9 0.95 1.05 1.1 1.15 1.2 -50 -25 0 25 50 75 100 125 150 T - Junction Temperature ( C)J O I= 2 5 0AD /c109 1.0 V - G-S Threshold Voltage(Normalized) th BV - Breakdown Voltage(Normlized) DSS

PAGE . 5October 26,2010-REV.00 MOUNTING PAD LAYOUT

  • Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7” plastic Reel ORDER INFORMATION LEGAL STATEMENT Copyright PanJit International, Inc 2010 The information presented in this document is believed to be accurate and reliable. The specifications and information herein a re subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. SOT-23 BSS138