BSS138 DGNJDZ | Alldatasheet
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Technical content
S OT-23 Plastic-Encapsulate MOSFETS 1.4 1.2 B SS138 F EATURE M aximum ratings (Ta= unless otherwise noted) P arameter Symbol Value Unit S OT-23 DONGGUAN NANJING ELECTRONICS LTD., D ongguan Nanjing Electronics Ltd. 1/5 www.dgnjdz.com 350 So urce Gate Protection Diode Gate Drain ESD protection for hig h speed data lines to IEC61000-4-2 ESD contact discharge typical 8KV, max 15KV ESD air discharge typical 15KV, max 25KV 0.40 All data s heet.com
1.20 1.40 P arameter Symbol Test Condition Min Typ Max Units O ff characteristics O n characteristics D ynamic characteristics (note 2) S witching characteristics D rain-source body diode characteristics Notes: D ongguan Nanjing Electronics Ltd. 2/5 www.dgnjdz.com 0.35A 0.35A 0.35A All data s heet.com
0.01 0.1 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 2 4 6 8 10 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0 1.2 5 50 75 100 125 0.0 0.5 1.0 1.5 2.0 P ulsed P ulsed Ta= 100 VS DIS Ta= S OURCE CURRENT I S (A) S OURCE TO DRAIN VOLTAGE VS D (V) VG 10V VG VG VG VG 3V,4V,5V,6V O utput Characteristics VG D RAIN CURRENT ID (A) D RAIN TO SOURCE VOLTAGE VD S (V) VG 4.5V Ta= P ulsed VG 10V Ta= P ulsed O N-RESISTANCE R D S(ON) ( ) D RAIN CURRENT ID (A) ID— —RD S(ON) Ta= 100 Ta= O N-RESISTANCE R D S(ON) ( ) G ATE TO SOURCE VOLTAGE VG S (V) VG —RD S(ON) ID= 500mA VD Pulsed D RAIN CURRENT ID (A) G ATE TO SOURCE VOLTAGE VG S (V) T ransfer Characteristics Ta= 100 Ta= ID= 250uA T hreshold Voltage T HRESHOLD VOLTAGE V T H (V) J UNCTION TEMPERATURE Tj ( ) D ongguan Nanjing Electronics Ltd. 3/5 www.dgnjdz.com All data s heet.com
M in Max Min MaxS ymbol Dimensions In InchesDimensions In Millimeters D ongguan Nanjing Electronics Ltd. 4/5 www.dgnjdz.com All data s heet.com
Dongguan Nanjing Electronics Ltd. 5/5 www.dgnjdz.com All data s heet.com