BSS138-HF COMCHIP | Alldatasheet

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Features

  • Low on-resistance. - Low gate threshold voltage. - Low input capacitance. - Fast switching speed. - Low input/output leakage. Dimensions in inches and (millimeter) SOT-23 0.122(3.10) 0.106(2.70) 0.059(1.50) 0.043(1.10) 0.079(2.00) 0.071(1.80) 0.043(1.10) 0.020(0.50) 0.006(0.15) 0.102(2.60) 0.087(2.20) 0.004(0.10) 0.014(0.35) 1 2 0.035(0.90) 0.012(0.30) 0.002(0.05) 1: Gate 2: Source 3: Drain Mechanical data - Case: SOT-23, molded plastic. - Mounting position: Any. VDSS VDGR VGSS ID PD RθJA TJ, TSTG ±20 200 300 417 -55 to +150 V V V mA mW °C/W Drain-source voltage Drain-gate voltage RGS ≤ 20KΩ Gate-source voltage Drain current-continuous Power dissipation Thermal resistance, junction to ambient Junction and storage temperature Page 1 G S D

Electrical Characteristics (at Ta=25°C unless otherwise noted) Comchip Technology CO., LTD. UnitsSymbolParameter Typ IGSS V(BR)DSS VGS(th) IDSS RDS(on) gFS Ciss 7550 0.5 1.4 100 µA V V µA Ω mS Gate leakage current Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Drain-source on-state resistance Forward transfer admittance Input capacitance Min MaxConditions Coss Crss tD(on) tD(off) pF ns Output capacitance Reverse transfer capacitance Turn-on delay time Turn-off delay time VGS = ±20V, VDS = 0V VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 50V, VGS = 0V ID = 0.22A, VGS = 10V VDS = 10V, VGS = 0V, f = 1MHz VDS = 10V, ID = 0.2A, f = 1MHz VDD = 30V, ID = 0.2A, RGEN = 50Ω 1.2 1.6 0.5 3.5 QW-JTR135 Page 2 REV:B

Comchip Technology CO., LTD. MOSFETMOSFET Rating and Characteristic Curves (BSS138-HF) Fig.1 - Drain-Source Current vs. Drain-Source Voltage Drain-Source Current, ID (A) Drain-Source Voltage, VDS (V) 0 2 4 6 8 10 0.1 0.2 0.3 0.4 0.5 0.6 VGS=3.5V VGS=3.25V VGS=3V VGS=2.75V VGS=2.5V TJ=25°C Fig.3 - Body Diode Current vs. Body Diode Voltage Diode Current, ID (A) Diode Forward Voltage, VSD (V) 0.001 0.01 0.1 1.0 150°C 25°C -55°C Fig.2 - Transfer Characteristics Drain-Source Current, ID (A) Gate-Source Voltage, VGS (V) 0 1.0 2.0 4.0 4.5 0.1 0.2 0.3 0.4 0.5 0.8 Fig.4 - Capacitance vs. Drain-Source Voltage Capacitance, C (pF) Drain-Source Voltage, VDS (V) 0 5 10 15 20 30 100 0.5 1.5 2.5 3.5 0.6 0.7 3.0 VDS=1V 150°C 25°C -55°C Ciss Coss Crss VGS=0V f=1MHz QW-JTR135 Page 3 REV:B

Comchip Technology CO., LTD. MOSFETMOSFET QW-JTR135 Page 4 Reel Taping Specification (mm) (inch) SOT-23 SYMBOL (inch) SOT-23 SYMBOL A (mm) B C d D D1 D2 E F P P0 P1 W W1 − 0.10 9.50 ± 1.00 − 0.004 0.374 ± 0.039 Index hole A B d E F P W C Trailer Device Leader 50±2 Empty Pockets Direction of Feed 100±2 Empty Pockets D1 D2 D 120° REV:B

Comchip Technology CO., LTD. MOSFETMOSFET QW-JTR135 Page 5 Marking Code Standard Packaging Case Type SOT-23 REEL (pcs) Reel Size (inch) 73,000 REEL PACK Suggested P.C.B. PAD Layout A C B D E C SIZE (inch) 0.035 (mm) 0.90 0.80 0.95 0.031 0.037 SOT-23 2.00 0.079 A B C D 2.90 0.114E Part Number Marking Code BSS138-HF SS REV:B Solid dot = Control code