BSS138 GOOD-ARK | Alldatasheet

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www.goodark.com Page 1 of 7 Rev.2.2 BSS138 50V N-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity S138 BSS138 SOT-23 Ø180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 50 V Gate-Source Voltage V GS ±20 V I D 0.22 I D (70℃) 0.18 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 0.88 A Maximum Power Dissipation P D 0.43 W Operating Junction and Storage Temperature Range T J STG -55 To 175 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 350 /W ℃ ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS GENERAL FEATURES

  • V DS = 50V,I D = 0.22A R DS(ON) < 6Ω @ V GS =4.5V R DS(ON) < 3.5Ω @ V GS =10V ESD Rating：1000V HBM
  • High Power and current handing capability
  • Lead free product
  • Surface Mount Package Schematic D iagram Marking and P in Assignment SOT T op V iew APPLICATION S
  • Direct Logic-Level Interface: TTL/CMOS
  • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.
  • Battery Operated Systems
  • Solid-State Relays

www.goodark.com Page 2 of 7 Rev.2.2 BSS138 50V N-Channel MOSFET Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 50 V Zero Gate Voltage Drain Current I DSS V DS =50V,V GS =0V 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V 10 uA Gate-Source Breakdown Voltage BV GSO V DS =0V, I G =±250uA ±20 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =1mA 0.8 1.5 V V GS =10V, I D =0.22A 3.5 Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =0.22A 6 Ω Forward Transconductance g FS V DS =10V,I D =0.22A 0.1 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss Output Capacitance C oss Reverse Transfer Capacitance C rss V DS =25V,V GS =0V, F=1.0MHz PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 2.6 Turn–On Rise Time t r Turn-Off Delay Time t d(off) Turn–Off Fall Time t f V DD =30V,V GS =10V, R GEN =6Ω，I D =0.22A nS Total Gate Charge Q g 1.7 2.4 Gate–Source Charge Q gs 0.1 Gate–Drain Charge Q gd V DS =25V,I D =0.22A,V GS =10V 0.4 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =0.44A 1.4 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.

www.goodark.com Page 5 of 7 Rev.2.2 BSS138 50V N-Channel MOSFET r(t),Normalized Effective Transient Thermal Impedance Figure Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 13 Safe Operation Area I D - Drain Current (A) Vds Drain-Source Voltage (V)

www.goodark.com Page 6 of 7 Rev.2.2 BSS138 50V N-Channel MOSFET SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8°

www.goodark.com Page 7 of 7 Rev.2.2 BSS138 50V N-Channel MOSFET SOT 23 Tape and Reel Information Dimensions in Millimeters (UNIT: mm) NOTES： 1. All dimensions are in millimeters. 2. 10 Sprocket hole pitch cumulative tolerance ±0.20MAX 3. General tolerance ±0.25