BSS138-G COMCHIP | Alldatasheet

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-Rugged and Reliable. -High density cell design for extremely low RDS(ON). Maximum Ratings (at Ta=25°C unless otherwise noted) Drain-source voltage Continuous gate-source voltage Continuous drain current Power dissipation Operating temperature Storage temperature UnitsSymbolParameter VDS VGS ID PD RΘJA TJ TSTG Value ±20 0.22 0.35 357 150 -55 to +150 V V A W °C/W Thermal resistance from Junction to ambient Circuit diagram G D S Company reserves the right to improve product design , functions and reliability without notice. 1 : Gate 2 : Source 3 : Drain Dimensions in inches and (millimeter) SOT-23 1 2 0.118(3.00) 0.110(2.80) 0.055(1.40) 0.047(1.20) 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.006(0.15) 0.003(0.08) 0.100(2.55) 0.089(2.25) 0.004(0.10) max 0.012(0.30) 0.020(0.50) RoHS Device

REV:A QW-BTR40 Comchip Technology CO., LTD. Electrical Characteristics ( TA=25°C unless otherwise noted) SymbolParameter Conditions Typ Max Unit V(BR)DSS IGSS IDSS VGS(th) RDS(ON) gFS Ciss Coss Crss td(on) tr VGS=0V, ID=250μA VDS=0V, VGS=±20V VDS=50V, VGS=0V VDS= , VGS ID=1mA VGS=10V, ID=0.22A VGS=4.5V, ID=0.22A VDS=10V, ID=0.22A VDS=25V, VGS=0V, f=1MHz VDD=30V, VDS=10V, ID=0.29A, ΩRGEN=6 Min Drain-Source breakdown voltage Gate-body leakage Zero gate voltage drain current Gate-threshold voltage (note 1) Forward transconductance (note 1) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time (note 1,2) Rise time (note 1,2) 0.8 0.12 V ±100 0.5 3.5 V nA μA V Ω S pF ns 1.5 Off characteristics Dynamic characteristics (note 2) Switching Characteristics Turn-off delay time (note 1,2) td(off) 36 Fall time (note 1,2) tf 14 IDSSVDS=30V, VGS=0V 100 nA VSDBody diode forward voltage (note 1) 1.4 Drain-source body diode characteristics VIS=0.44A, VGS=0V Note: 1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% 2. These parameters have no way to verify. On characteristics Static drain-source on-resistance (note 1) Company reserves the right to improve product design , functions and reliability without notice.

REV:A QW-BTR40 Comchip Technology CO., LTD. RATING AND CHARACTERISTIC CURVES ( )BSS138-G Drain Current, ID (A) Fig.3 - RDS(ON) － ID ON-Resistance, RDS(ON) (Ω) Gate to Source Voltage, VGS (V) Fig.4 - RDS(ON) － VGS ON-Resistance, RDS(ON) (Ω) Drain to Source Voltage, VDS (V) Fig.1 - Output Characteristics Drain Current, ID (A) 2.0 0 4 5 1.0 1 2 3 0.5 1.5 Gate to Source Voltage, VGS (V) 4210 Fig.2 - Transfer Characteristics 0.4 0.6 Drain Current, ID (A) 0.1 0.0 1.0 3.0 1.5 0.5 2.0 Source to Drain Voltage, VSD (V) 1.40.60.40.2 Fig.5 - IS － VSD 0.01 0.1 Source Current, IS (A) 0.001 0.8 TA=25°C Pulsed VGS=10V TA=25°C Pulsed 0.2 0.3 0.5 2.5 VGS= 4.5V VGS= 10V VGS= 6V TA=25°C Pulsed 42 60 TA=25°C Pulsed ID= 500mA 1.21.0 TA=25°C Pulsed

(mm) (inch) 2.142 ± 0.039 4.00 ± 0.10 178 ± 2.00 SYMBOL (mm) E F P P0 P1 W W1 1.75 ± 0.10 0.069 ± 0.004 3.50 ± 0.10 0.138 ± 0.004 SOT-23 3.15 ± 0.10 0.124 ± 0.004 2.77 ± 0.10 0.109 ± 0.004 1.22 ± 0.10 0.048 ± 0.004 12.30 ± 1.00 0.484 ± 0.039 8.00 0.30 /+ –0.10 d F E B P1 P0 o 120 D1 D2 P D A W T C MOSFET Page 4 REV:A QW-BTR40 Comchip Technology CO., LTD.

REV:A QW-BTR40 Comchip Technology CO., LTD. Part Number BSS138-G Marking Code SS Marking Code XX 1 2 xx = Product type marking code Suggested PAD Layout SIZE (inch) 0.031 (mm) 0.80 1.90 2.02 0.075 0.080 SOT-23 2.82 0.111 A B C D A C B D Standard Packaging Case Type SOT-23 3,000 REEL ( pcs ) Reel Size (inch) REEL PACK