BSS138 FUTUREWAFER | Alldatasheet

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N Channel Enhancement Mode MOSFET Document No.: F51833F 11-NOV-2021 V 2.2 www.futurewafer.com.tw FQE-001-04 1. Synopsis 1-1. General Description These N-Channel Enhancement Mode Field Effect Transistors Are Produced by DMOS Technology. These Products Have Been Designed to Minimize On-State Resistance While Provide Rugged, Reliable, And Fast Switching Performance. These Products Are Particularly Suited For Low Voltage, Low Current Applications Such as Small Servo Motor Control, Power MOSFET Gate Drivers, And Other Switching Applications. 1-2. Feature List

  • R DS(ON) = 3.5Ω @ V GS = 10V R DS(ON) = 6.0Ω @ V GS = 4.5V
  • Low On -Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input / Output Leakage
  • Low Gate Threshold Voltage 1-3. Mechanical Characteristics
  • Molded JEDEC Package : SOT-23
  • Packing: Tape and Reel
  • Flammability rating UL 94V -0
  • Halogen Free
  • JEDEC MSL Classification: LEVEL 1 1-4. Device Characteristics 1-5. Thermal Characteristics SOT-23 G D S

N Channel Enhancement Mode MOSFET Document No.: F51833F 11-NOV-2021 V 2.2 www.futurewafer.com.tw FQE-001-04 2. Contents

N Channel Enhancement Mode MOSFET Document No.: F51833F 11-NOV-2021 V 2.2 www.futurewafer.com.tw FQE-001-04 3. Electrical Property 3-1. Electrical Characteristics 3-2. Drain-Source Diode Characteristics and Maximum Ratings

N Channel Enhancement Mode MOSFET Document No.: F51833F 11-NOV-2021 V 2.2 www.futurewafer.com.tw FQE-001-04 3-3. Ratings and Characteristics Curve-Fig 1-6 Fig 1. On-Region Characteristics V DS, Drain to Source Voltage (V) I D, Drain Current (A) Fig 2. On-Resistance Variation with Drain Current and Gate Voltage I D, Drain Current (A) R DS(ON), Normalized Drain-Source On-Resistance Fig 3. On-Resistance Variation with Temperature T J, Junction Temperature (°C) R DS(ON), Normalized Drain-Source On-Resistance V GS, Gate to Source Voltage (V) Fig 4. On-Resistance Variation with Gate to Source Voltage R DS(ON), On resistance (ohm) Fig 5. Transfer Characteristics. V GS, Gate to Source Voltage (V) I D, Drain Current (A) Fig 6. Body Diode Forward Voltage Variation with Source Current and Temperature V SD, Body Diode Forward Voltage (V) I S, Reverse Drain Current (A)

N Channel Enhancement Mode MOSFET Document No.: F51833F 11-NOV-2021 V 2.2 www.futurewafer.com.tw FQE-001-04 3-3. Ratings and Characteristics Curve-Fig 7-11 Fig 7. Gate Charge Characteristics Q g, Gate Charge (nC) V GS, Gate to Source Voltage (V) Fig 8. Capacitance Characteristics V DS, Drain to Source Voltage (V) Capacitance (pF) Fig 9. Maximum Safe Operating Area V DS, Drain to Source Voltage (V) I D, Drain Current (A) Fig 10. Single Pulse Maximum Power Dissipation T1, Time (sec) P pk, Peak Transient Power (W) Fig 11. Transient Thermal Response Curve. T t, Time (sec) R(t), Normalized Effective Transient Thermal Resistance

N Channel Enhancement Mode MOSFET Document No.: F51833F 11-NOV-2021 V 2.2 www.futurewafer.com.tw FQE-001-04 4. Soldering Parameters

N Channel Enhancement Mode MOSFET Document No.: F51833F 11-NOV-2021 V 2.2 www.futurewafer.com.tw FQE-001-04 5. Package Information 5-1. Dimension 5-2. PCB Pad Layout Recommendation Unit:mm

N Channel Enhancement Mode MOSFET Document No.: F51833F 11-NOV-2021 V 2.2 www.futurewafer.com.tw FQE-001-04 6. Packing 6-1. Taping and Reel Specification Taping Width Tape Orientation 8mm 6-2. Embossed Carrier Tape Specification Direction Of Feed Unit:mm

N Channel Enhancement Mode MOSFET Document No.: F51833F 11-NOV-2021 V 2.2 www.futurewafer.com.tw FQE-001-04 6-3. Surface Mount Reel Specification 6-4. Tape Leader and Trailer Specification Unit:mm

N Channel Enhancement Mode MOSFET Document No.: F51833F 11-NOV-2021 V 2.2 www.futurewafer.com.tw FQE-001-04 7. Ordering Information 8. Version 8-1. History 8-2. Company Profile Futurewafer Tech Co., Ltd. 台灣未來芯科技股份有限公司 TEL: +886-3-3350161 / FAX: +886-3-3350172 cherry@futurewafer.com.tw No. 286-11F, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan