BSS138 CET | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
© 50V, 0.22A , Rosion=3.52 @Vos=10V. D Rosoon=6Q @Ves=4.5V. High dense cell design for low Roson). e Rugged and reliable. ¢ SOT-23 package. G SOT-23 D ra s ay. Ss ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted) a Drain Current-Continuous* @Ty=125°C | o | 2 [| m | Pulsed” ee a Drain-Source Diode Forward Current * Operating Junction and Storage Ty, Tst¢ -55 to 150 °C Temperature Range , THERMAL CHARACTERISTICS 7-7
ELECTRICAL CHARACTERISTICS (Ta-25°C unless otherwise noted) [eres |b] conn in [yp tn uit Dasoneteion aig [ot | Vou [a] | [v| 2x0 GatotageranCurent | ss | vosss0Uvossv [|| 05 oA | esesovtetae | tos | vesnanivssev |_| [tol ot | [ae Tresndvotge | ves | vseVosn=ma__ | 08 | 15 | 16 | Vv | pom ome Ht Fsstaviezama | [es [6 [2 | [onsite ancurent | tocw | vos=riivoszsov [00] || ma Fenestra | Os | Wsst@hn=2ma | eof] — [ns | fe [a | | - Vos =25V, Ves= OV fete fos Ma” Chetete Tf To a beat Ta [a [| Pfs Te To | 7-8
a.Surface Mounted on FR4 Board, t<10sec.
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Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Capacitance Figure 4. Qn-Resistance Variation with
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Figure 5. Gate Threshold Variation Figure 6. Breakdown Voltage Variation Figure 7. Transconductance Variation Figure 8. Body Diode Forward Voltage Figure 9. Gate Charge Figure 10. Maximum Safe
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
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Figure 13. Normalized Thermal Transient Impedance Curve