BSS138-CAR GWSEMI | Alldatasheet
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zHigh density cell design for extremely low RDS(on) zRugged and Relaible z-CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable Maximum ratings (T a =25℃ unless otherwise noted) Parameter Symbo Value Unit Drain-Source Voltage V DS Continuous Gate-Source Voltage V GSS ±20 V Continuous Drain Current I D 0.22 A Power Dissipation D P 0.35 W Thermal Resistance from Junction to Ambient R θJA 357 ℃/W Operating Temperature T j 150 Storage Temperature T stg -55 ~+150 MARKING: Equivalent Circuit APPLICATION Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays 1.Gate 2.Source 3.Drain SOT-23 Plastic Package SS aT =25 ℃ unless otherwise specified MOSFET ELECTRICAL CHARACTERISTICS Notes: 1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. 2. These parameters have no way to verify. SS138-CAR B N-Channel 50-V(D-S) MOSFET Typ Drain-source body diode characteristics Body diode forward voltage (note 1) VSD IS=0.44A, VGS = 0V 1.4 V Switching characteristics Turn-on delay time (note 1,2) td(on) VDD=30V, VDS=10V, ID =0.29A,RGEN=6 Ω ns Rise time (note 1,2) tr 18 Turn-off delay time (note 1,2) td(off) 36 Fall time (note 1,2) tf 14 Forward transconductance (note 1) gFS VDS =10V, ID =0.22A 0.12 S Dynamic characteristics (note 2) Input capacitance Ciss VDS =25V,VGS =0V, f=1MHz pFOutput capacitance Coss Reverse transfer capacitance Crss On characteristics Gate-threshold voltage (note 1) VGS(th) VDS =VGS, ID =1mA 0.80 1.50 V Static drain-source on-resistance (note 1) RDS(on) VGS =10V, ID =0.22A 3.50 ΩVGS =4.5V, ID =0.22A 6 Gate-body leakage IGSS VDS =0V, VGS =±20V ±100 nA Zero gate voltage drain current IDSS VDS =50V, VGS =0V 0.5 µA VDS =30V, VGS =0V 100 nA Parameter Symbol Test Condition Min Max Units Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 50 V
0.0 0.5 1.0 1.5 2.0 010 334 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V GS =10V V GS =5V V GS =4V V GS =3V V GS =3V,4V,5V,6V Output Charact eristics V GS =2V DRAIN CURRENT I D (A) DRAIN TO SOURCE VOLTAGE V DS (V) T a =25 Pulsed V DS =3V Pulsed DRAIN CURRENT I D (A) GATE TO SOURCE VOLTAGE V GS (V) Transfer C h aracteristics T a =100 T a =25 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 020 68 10 Pulsed V GS =4.5V V GS =10V T a =25 Pulsed ON-RESISTANCE R DS(ON) DRAIN CURRENT I D (A) I D R DS(ON) T a =100 T a =25 ON-RESISTANCE R DS(ON) GATE TO SOURCE VOLTAGEGATE GS (V) V GS R DS(ON) I D =500mA 1E-3 0.01 0.1 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 Pulsed T a =100 V SD I S T a =25 SOURCE CURRENT I S (A) SOURCE TO DRAIN VOLTAGEVOLTA SD (V) I D =250uA Threshold Voltage THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T j SS138-CAR B N-Channel 50-V(D-S) MOSFET Typical Characteristics
Plastic surface mounted package; 3 leads SOT-23 SS138-CAR B N-Channel 50-V(D-S) MOSFET