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N-Channel 50-V(D-S) MOSFET FEAT URE z High density cell design for extremely low R DS(on) z Rugg ed and Relaible Maximum ratings (Ta=25℃ unless other wise noted) Parameter Symbol Value Unit Drain-Sourc e Voltage VDS 50 Continuo us Gate-Source Voltage VGSS ±20 V Continuo us Drain Current ID 0.22 A Pow er Dissipation PD 0.35 W Thermal Resist ance from Junction to Ambient RθJA 357 ℃/W Operating T emperature Tj 150 Storage Te mperature Tstg -55 ~+150 SOT-23 1. GA TE 2. SOURCE 3. DRAIN MARKING Equivalent Circuit Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display Memories, Transistors, etc. Battery Operated Systems Solid-State Relays APPLICATION z z z z V(BR) DSS RDS(on)MAX ID 50V 3.5Ω@10V 220mA 6Ω@4.5V BSS138

meter Symbol Test Condition Min Typ Max Units Off ch aracteristics Drain-s ource breakdown voltage V(BR)DS S VGS = 0V, ID = 250µA 50 V Gate-bod y leakage IGSS V DS =0 V, VGS =±20V ±10 0 nA VDS = 50V, VGS =0 V 0.5 µA Z ero gate voltage drain current IDSS VDS = 30V, VGS =0 V 100 nA On characteristics Gate-thresho ld voltage (note 1) VGS(t h) V DS =VGS, ID = 1mA 0.80 1.50 V VGS = 10V, ID =0.22A 3.50 Static drain-s ource on-resistance (note 1) R DS (on) VGS =4.5V, ID =0.22A 6 Ω F orward transconductance (note 1) gFS VDS = 10V, ID =0.22A 0.12 S D ynamic characteristics (note 2) Input cap acitance Ciss 27 Output capac itance Coss 13 Revers e transfer capacitance Crss VDS = 25V,VGS =0V, f=1MHz pF S witching characteristics T urn-on delay time (note 1,2) td( on) 5 Rise time (n ote 1,2) tr 18 T urn-off delay time (note 1,2) td( off) 36 F all time (note 1,2) tf VDD= 30V, VDS= 10V, ID = 0.29A,RGEN=6Ω ns Dra in-source body diode characteristics Bod y diode forward voltage (note 1) V SD I S= 0.44A, VGS = 0V 1.4 V No tes: 1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. 2. These parameters have no way to verify. MOSFET ELECTRICAL CHARACTERISTICS aT =25 ℃ unless otherwise specified BSS138

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.2 0.4 0.6 0 .8 1.0 1.2 1.4 1E-3 0.01 0.1 012345 0.0 0.5 1.0 1.5 2.0 0.2 0.4 0.6 0 .8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0246 8

6 Ta=25℃

DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) 3E-3 0.03 Ta=25℃ Pulsed 0.3 VSDIS —— SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) Ta=25℃ Pulsed VGS=10V Out put Characteristics DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) 0.1 Ta=25℃ Pulsed VGS=4.5V VGS=6V VGS=10V ON- RESISTANCE RDS(O N) () DRAIN CURRENT ID (A) Ta=25℃ Pulsed ID=500mA IDRDS(ON) —— VGSRDS(ON) ON- RESISTANCE RDS(O N) () GATE TO SOURCE VOLTAGE VGS (V) Typical Characteristics

/g54/g50/g55/g16/g21/g22/g3/g51/g68/g70/g78/g68/g74/g72/g3/g50/g88/g87/g79/g76/g81/g72/g3/g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3 /g54/g50/g55/g16/g21/g22/g3/g54/g88/g74/g74/g72/g86/g87/g72/g71/g3/g51/g68/g71/g3/g47/g68/g92/g82/g88/g87/g3 Min M ax Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 /g537 0 °8 °0 °6 ° 0.550 REF 0.022 REF Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP 0.037 TYP