BSS138-A HUIXIN | Alldatasheet

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SOT-23 Plastic-Encapsulate MOSFETSBSS138-A N-Channel 50-V(D-S) MOSFET FEATURE z High density cell design for extremely low RDS(on) z Rugged and Relaible z AEC-Q101qualified Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 5 0 Continuous Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 0.22 A Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient RθJA 357 ℃/W Operating Temperature Tj MARKING Equivalent Circuit Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays APPLICATION z z z z V(BR)DSS RDS(on)MAX ID 50V 3.5Ω@10V 220mA 6Ω@4.5V 1.Gate 2.Source 3.Drain SOT-23 Plastic Package +86-769-22857832 huixin@hxkj.hk Rev. 1.0 Page 1 of 4 Storage Temperature Tstg -55 ~+150 -55 ~+150

Parameter Symbol Test Condition Min Typ Max Units Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 50 V Gate-body leakage IGSS V DS =0V, VGS =±20V ±100 nA VDS =50V, VGS =0V 0.5 µA Zero gate voltage drain current IDSS VDS =30V, VGS =0V 100 nA On characteristics Gate-threshold voltage (note 1) VGS(th) V DS =VGS, ID =1mA 0.80 1.50 V VGS =10V, ID =0.22A 3.50 Static drain-source on-resistance (note 1) R DS(on) VGS =4.5V, ID =0.22A 6 Ω Forward transconductance (note 1) gFS VDS =10V, ID =0.22A 0.12 S Dynamic characteristics (note 2) Input capacitance Ciss 27 Output capacitance Coss 13 Reverse transfer capacitance Crss VDS =25V,VGS =0V, f=1MHz pF Switching characteristics Turn-on delay time (note 1,2) td(on) 5 Rise time (note 1,2) tr 18 Turn-off delay time (note 1,2) td(off) 36 Fall time (note 1,2) tf VDD=30V, VDS=10V, ID =0.29A,RGEN=6Ω ns Drain-source body diode characteristics Body diode forward voltage (note 1) V SD I S=0.44A, VGS = 0V 1.4 V Notes: 1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%. 2. These parameters have no way to verify. aT =25 ℃ unless otherwise specified

ELECTRICAL CHARACTERISTICS

+86-769-22857832 huixin@hxkj.hk Rev. 1.0 Page 2 of 4

0.01 0.1 012345 0.0 0.5 1.0 1.5 2.0 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 02468 1 0 012345 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 Pulsed Pulsed Ta=100℃ VSDIS — — Ta=25℃ SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) VGS=10V VGS=5V VGS=4V VGS=3V VGS=3V,4V,5V,6V Output Characteristics VGS=2V DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) VGS=4.5V Ta=25℃ Pulsed VGS=10V Ta=25℃ Pulsed ON-RESISTANCE RDS(ON) () DRAIN CURRENT ID (A) ID——RDS(ON) Ta=100℃ Ta=25℃ ON-RESISTANCE RDS(ON) () GATE TO SOURCE VOLTAGE VGS (V) VGS——RDS(ON) ID=500mA VDS=3V Pulsed DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) Transfer Characteristics Ta=100℃ Ta=25℃ ID=250uA Threshol d Voltage THRESHOLD VOLTAG E VTH (V) JUNCTION TEMPERATURE Tj ( )℃ Typical Characteristics /g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3/g3 +86-769-22857832 huixin@hxkj.hk Rev. 1.0 Page 3 of 4

+86-769-22857832 huixin@hxkj.hk Rev. 1.0 Page 4 of 4 Package Outline SOT-23