BSS138 DIODES | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Features
/c183Low On-Resistance /c183Low Gate Threshold Voltage /c183Low Input Capacitance /c183Fast Switching Speed /c183Low Input/Output Leakage Maximum Ratings @ TA = 25/c176C unless otherwise specified Characteristic Symbol BSS138 Units Drain-Source Voltage VDSS 50 V Drain-Gate Voltage RGS /c163 20K/c87 VDGR 50 V Gate-Source Voltage Continuous VGSS /c17720 V Drain Current Continuous ID 200 mA Power Dissipation (Note 1) Pd 300 mW Thermal Resistance, Junction to Ambient (Note 1) R/c113JA 417 /c176C/W Operating and Storage Temperature Range Tj,T STG -55 to +150 /c176C /c183Case: SOT-23, Molded Plastic /c183Case Material - UL Flammability Classification Rating 94V-0 /c183Moisture sensitivity: Level 1 per J-STD-020A /c183Terminals: Solderable per MIL-STD-202, Method 208 /c183Terminal Connections: See Diagram /c183Marking (See Page 2): K38 /c183Ordering & Date Code Information: See Page 2 /c183Weight: 0.008 grams (approx.) Mechanical Data A E J L TOP VIEW M B C H G D K D G S Electrical Characteristics @ TA = 25/c176C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage BVDSS 50 75 /c190 V VGS = 0V, ID = 250/c109A Zero Gate Voltage Drain Current IDSS /c190/c190 0.5 µA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS /c190/c190 /c177100 nA VGS = /c17720V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) 0.5 1.2 1.5 V VDS =V GS, ID =-250/c109A Static Drain-Source On-Resistance RDS (ON) /c190 1.4 3.5 /c87 VGS = 10V, ID = 0.22A Forward Transconductance gFS 100 /c190/c190 mS VDS =25V, ID = 0.2A, f = 1.0KHz DYNAMIC CHARACTERISTICS Input Capacitance Ciss /c190/c190 50 pF VDS = 10V, VGS = 0V f = 1.0MHzOutput Capacitance Coss /c190/c190 25 pF Reverse Transfer Capacitance Crss /c190/c190 8.0 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) /c190/c190 20 ns VDD = 30V, ID = 0.2A, RGEN = 50/c87Turn-Off Delay Time tD(OFF) /c190/c190 20 ns which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to miminize self-heating effect. Source Gate Drain SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 /c97 0/c176 8/c176 All Dimensions in mm
DS30144 Rev. 6 - 2 2 of 5 BSS138 www.diodes.com K38 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K38 YM Marking Information Device Packaging Shipping BSS138-7 SOT-23 3000/Tape & Reel Ordering Information (Note 3) Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 123 45 6 7 89 OND Date Code Key 0.1 0.2 0.3 0.4 0.5 0.6 10 32 54 76 8 9 10 I , DRAIN-SOURCE CURRENT (A)D V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 1 Drain-Source Current vs. Drain-Source Volta ge T = 2 5°Cj V = 3 . 5 VGS V = 3 . 2 5 VGS V = 3 . 0 VGS V = 2 . 7 5 VGS V = 2 . 5 VGS V , GATE-SOURCE VOLTAGE (V)GS Fig. 2 Transfer Characteristics 0.1 0.2 0.3 0.5 0.4 0.6 0.7 0.8 I , DRAIN-SOURCE CURRENT (A)D -55°C 150°C 25°C V = 1VDS Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code JKL MN P R ST U VW
DS30144 Rev. 6 - 2 3 of 5 BSS138 www.diodes.com 0.65 T , JUNCTION TEMPERATURE (°C)j Fig. 3 Drain-Source On Resistance vs. Junction Temperature 0.85 1.05 1.25 1.65 1.45 1.85 2.05 2.25 2.45 -55 -5 45 95 145 R , NORMALIZED DRAIN-SOURCE ON RESISTANCE ( W)DS(ON) V = 10VGS V = 4.5VGS I = 0.5AD I = 0.075AD 0.2 0.4 0.6 0.8 1.4 1.2 1.8 1.6 -40-55 5-25 -10 5020 35 80 9565 110 125 140 V , GATE THRESHOLD VOLTAGE (V)GS(th) T , JUNCTION TEMPERATURE (°C)j Fig. 4 Gate Threshold Volta ge vs. Junction Temperature I = 1 . 0 m AD I , DRAIN CURRENT (A)D Fig. 5 Drain-Source On Resistance vs. Drain Current R , DRAIN-SOURCE ON RESISTANCE ( W)DS(ON) 150°C -55°C 25°C V = 2.5VGS
DS30144 Rev. 6 - 2 4 of 5 BSS138 www.diodes.com I , DRAIN CURRENT (A)D Fig. 6 Drain-Source On Resistance vs. Drain Current 150°C -55°C 25°C V = 2.75VGS V , DRAIN-SOURCE VOLTAGE (V)DS Fig. 7 Drain-Source On Resistance vs. Drain Current 150°C -55°C 25°C V = 4.5VGS 0.5 1.5 2.5 3.5 I , DRAIN CURRENT (A)D Fig. 8 Drain-Source On Resistance vs. Drain Current 150°C -55°C 25°C V = 1 0 VGS
DS30144 Rev. 6 - 2 5 of 5 BSS138 www.diodes.com I, D I ODE CURRENT (A)D 0.001 0.01 0.1 V , DIODE FORWARD VOLTAGE (V)SD Fig. 9 Body Diode Current vs. Body Diode Voltage 150°C -55°C 25°C C, CAPACITANCE (pF) 100 V , DRAIN SOURCE VOLTA GE (V)DS Fig. 10 Capacitance vs. Drain Source Voltage 0 5 10 15 20 25 30 V= 0 VGS f = 1MHz CrSS COSS CiSS