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Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) Ordering Information (Note 5) Part Number Qualification Case Packaging BSS138-7-F Commercial SOT23 3000/Tape & Reel BSS138-13-F Commercial SOT23 10000/Tape & Reel BSS138Q-7-F Automotive SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC -Q101 and standard products are electrically and thermally the 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 1998 1999 2000 … 2002 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 Code J K L … N D E F G H I J K L M Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT23 Top View Equivalent Circuit Top View D G S K38 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test Site) M = Date Code Marking for CAT (Chengdu Assembly/ Test Site) Y or = Year (ex: E = 2017) M = Month (ex: 9 = September) Source Gate DrainShanghai A/T Site Chengdu A/T Site
Document number: DS30144 Rev. 21 - 2 2 of 5 www.diodes.com August 2017 © Diodes Incorporated BSS138 Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 50 V Drain-Gate Voltage RGS 20K VDGR 50 V Gate-Source Voltage Continuous VGSS 20 V Gate-Source Voltage Non Repetitive, Pulse Width<50s 40 V Drain Current Continuous ID 200 mA Pulsed Drain Current (10μs Pulse Duty Cycle = 1%) IDM 1 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 6) PD 300 mW Thermal Resistance, Junction to Ambient (Note 6) RJA 417 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 50 75 V VGS = 0V, ID = 250A Zero Gate Voltage Drain Current IDSS 0.5 µA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.5 1.2 1.5 V VDS = VGS, ID = 250A Static Drain-Source On-Resistance RDS(ON) 1.4 3.5 VGS = 10V, ID = 0.22A Forward Transconductance gFS 100 mS VDS = 25V, ID = 0.2A, f = 1.0KHz DYNAMIC CHARACTERISTICS Input Capacitance Ciss 50 pF VDS = 10V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 25 pF Reverse Transfer Capacitance Crss 8.0 pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 20 ns VDD = 30V, ID = 0.2A, RGEN = 50 Turn-Off Delay Time tD(OFF) 20 ns Notes: 6. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Incorporated’s suggested pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 7. Short duration pulse test used to minimize self-heating effect. 0.1 0.2 0.3 0.4 0.5 0.6 0 1091 2 3 4 5 6 7 8 I , DRAIN-SOURCE CURRENT (A)D V , DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage DS T = 25 Cj ° V = 3.5VGS V = 3.25VGS V = 3.0VGS V = 2.75VGS V = 2.5VGS V , GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics GS 0.1 0.2 0.3 0.5 0.4 0.6 0.7 0.8 I , DRAIN-SOURCE CURRENT (A)D -55 C° 150 C° 25 C° V = 1VDS TJ = 25°C
Document number: DS30144 Rev. 21 - 2 3 of 5 www.diodes.com August 2017 © Diodes Incorporated BSS138 0.65 T , JUNCTION TEMPERATURE (癈) Fig. 3 Drain-Source On-Resistance vs. Junction Temperature j 0.85 1.05 1.25 1.65 1.45 1.85 2.05 2.25 2.45 -55 -5 45 95 145 V = 10VGS V = 4.5VGS I = 0.5AD I = 0.075AD R , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ( ) DS(ON) V , GATE THRESHOLD VOLTAGE (V)GS(th) T , JUNCTION TEMPERATURE (癈) Fig. 4 Gate Threshold Variation vs. Ambient Temperature j 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 I = 1mAD I = 250 礎D I , DRAIN-CURRENT (A) Fig. 5 Drain-Source On-Resistance vs. Drain-Current D 150 C° 25 C° V = 2.5VGS -55 C° R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) I , DRAIN-CURRENT (A) Fig. 6 Drain-Source On-Resistance vs. Drain-Current D 150 C° -55 C° 25 C° V = 2.75VGS R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) I , DRAIN-CURRENT (A) Fig. 7 Drain-Source On-Resistance vs. Drain-Current D 150 C° -55 C° 25 C° V = 4.5VGS R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) 0.5 1.5 2.5 3.5 I , DRAIN-CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain-Current D 150 C° -55 C° 25 C° V = 10VGS R , DRAIN-SOURCE ON-RESISTANCE ( )DS(ON) Junction Temperature TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) ID = 250µ A
Document number: DS30144 Rev. 21 - 2 4 of 5 www.diodes.com August 2017 © Diodes Incorporated BSS138 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 I , DIODE CURRENT (A)D 0.001 0.01 0.1 V , DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage SD 150 C° -55 C° 25 C° C, CAPACITANCE (pF) 100 V , DRAIN-SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain-Source Voltage DS 0 5 10 15 20 25 30 V = 0V f = 1MHz GS CrSS COSS CiSS J K1 K GAUGE PLANE 0.25 H L M All 7° A C B D GF a X Y Y1 C Ciss Crss Coss
Document number: DS30144 Rev. 21 - 2 5 of 5 www.diodes.com August 2017 © Diodes Incorporated BSS138 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, internation al or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into mul tiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be pr ovided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com