BSS123W DGNJDZ | Alldatasheet
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Dongguan Nanjing Electronics Ltd. N Chan nel MOSFET FEA TURE Surface Mount Package High Density Cell Design for Extremely Low RDS(ON V oltage Controlled Small Signal Switch Rugged and Reliable APPLICATION S m a l l S e r v o M o t o r C o n t r o l s P o w e r M O S F E T G a t e D r i v e r s Switching Application ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Para meter Symbol Value Unit N-MOSFET Drain-S ource Voltage VDS 100 V Gate-Source V oltage VGS ±20 V Conti nuous Drain Current (note 1) ID 0.17 A Pulse d Drain Current (tp=10us) IDM 0.68 A Conti nous Source-Drain Diode Current IS 0.17 A Po wer Dissipation PD 0.35 W T hermal Resistance from Junction to Ambient (note 1) RθJA 357 ℃/W Operation Junction and Storage Temperature Range ℃ TJ,TSTG -55~ +150 Lea d Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ MARKING Equivalent Circuit V(BR )DSS RDS(o n)MAX ID 100V 6Ω@10V 0.17A 10Ω@4.5V
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www.dgnjdz.com1/5 S OT-323 Plastic-Encapsulate MOSFETS DONGGUAN NANJING ELECTRONICS LTD., S OT-323BSS123W All data s heet.com
meter Symbol Test Condition Min Typ Max Unit ST ATIC CHARACTERISTICS Drain-s ource breakdown voltage V (B R)DSS VGS = 0V, ID = 250µA 100 V Z ero gate voltage drain current ID SS VDS = 100V,VGS = 0 V 1 µA VDS = 20V,VGS = 0V 10 nA Gate-bod y leakage current IGSS VGS = ±20V, VDS = 0 V ±50 nA Gate threshol d voltage (note 2) VGS( th) VDS =VGS, ID = 250µA 1 1.6 2 V Drain-s ource on-resistance(note 2) R DS (on) VGS =4.5V, ID =0.17A 3.8 10 Ω VGS = 10V, ID =0.17A 3.5 6 Ω F orward tranconductance(note 2) gFS VDS = 10V, ID =170mA 80 mS Diod e forward voltage VSD I S= 340mA, VGS = 0 V 1.3 V DYN AMIC CHARACTERISTICS (note 4) Input Cap acitance Ciss VDS = 25V,VGS =0 V,f =1MHz 29 60 pF Output Cap acitance Coss 10 15 pF Revers e Transfer Capacitance Crss 2 6 pF SWITCHING C HARACTERISTICS (note 3,4) T urn-on delay time td( on) VGS= 10V,VDD= 30V, ID=0.28 A,RGEN=50Ω 8 ns T urn-on rise time tr 8 ns T urn-off delay time td( off) 13 ns T urn-off fall time tf 16 ns T otal Gate Charge Qg VDS= 10V,ID= 0.22A, VGS= 10V 1.4 2 nC Gate-Source C harge Qgs 0.15 0.25 nC Gate-Drain Charge Qgd 0.2 0.4 nC No tes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=300μs, duty cycle≤2%. 3. Switching characteristics are independent of operating junction temperature. 4. Graranted by design，not subject to producting. MOSFET ELECTRICAL CHARACTERISTICS T =25 ℃ unless otherwise specified a Dongguan Nanjing Electronics Ltd. www.dgnjdz.com2/5 All data s heet.com
0.0 100 400 0.0 100 150 200 250 300 350 400 450 50 100 150 200 250 300 350 2345678 9 1 0 0.0 100 150 200 250 300 350 400 450 25 50 75 100 125 1.0 1.2 1.4 1.6 1.8 2.0 Puls ed Puls ed Ta=100℃ VSDIS — — Ta=25℃ SOURCE CURRENT IS (mA) SOURCE TO DRAIN VOLTAGE VSD (V) VGS=3V VGS=2.5V VGS=2V VGS=4V,5V,6V O utput Characteristics DRAIN CURRENT ID (mA) DRAIN TO SOURCE VOLTAGE VDS (V) Ta=25℃ Pulsed VGS=10V VGS=4.5V Ta=25℃ Puls ed O N-RESISTANCE RDS (ON) () DRAIN CURRENT ID (m ID——RDS( ON) Ta=100℃ Ta=25℃ O N-RESISTANCE RDS (ON) () GATE TO SOURCE VOLTAGE VGS (V) VGS——RDS( ON) ID=0.17A VDS=3V Puls ed DRAIN CURRENT ID (mA) GATE TO SOURCE VOLTAGE VGS (V) Transfer C haracteristics Ta=100℃Ta=25℃ ID=250uA T hreshold Voltage T HRESHOLD VOLTAGE VTH (V) JUNCTION TEM PERATURE Tj ( \\SLFDO&KDUDFWHULVWLFV Dongguan Nanjing Electronics Ltd. www.dgnjdz.com3/5 All data s heet.com
M in Max Min MaxS ymbol Dimensions In Millimeters Dimensions In Inches D ongguan Nanjing Electronics Ltd. 4/5 www.dgnjdz.com All data s heet.com
D ongguan Nanjing Electronics Ltd. 5/5 www.dgnjdz.com All data s heet.com