BSS123W GWSEMI | Alldatasheet
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Surface Mount Package High Density Cell Design for Extremely Low R DS(ON) Volt age Controlled Small Signal Switch Rugged and Reliable APPLICATION S m a l l S e r v o M o t o r C o n t r o l s P o w e r M O S F E T G a t e D r i v e r s Switching Application ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit N-MOSFET Drain-Source Voltag e VDS 100 V Gate-Source Voltag e VGS ±20 V Continuous Dr ain Current (note 1) ID 0.17 A Pulsed Drain C urrent (tp=10us) IDM 0.68 A Continous So urce-Drain Diode Current IS 0.17 A Powe r Dissipation PD 0.35 W Thermal Resistance from Jun ction to Ambient (note 1) RθJA 357 ℃/W Junction T emperature TJ 150 ℃ Storage Temperature TSTG -55~+ 150 ℃ Lead Te mperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ MARKING : K 23 GA TE SOURCE DRAIN SS123WB N-Channel MOSFET V(BR)DSS RDS(on)MAX ID 100V 6Ω@10V 0.17A 10Ω@4.5V
Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =250µA 100 V Zero gate voltage drain current I DSS V DS =100V,V GS = 0V 1 µA V DS =20V,V GS = 0V 10 nA Gate-body leakage current I GSS V GS =±20V, V DS = 0V ±50 nA Gate threshold voltage (note 2) V GS(th) V DS GS , I D =250µA 1 2.8 V Drain-source on-resistance(note 2) R DS(on) V GS =4.5V, I D =0.17A 10 Ω V GS =10V, I D =0.17A 6 Ω Forward tranconductance(note 2) g FS V DS =10V, I D =170mA 80 mS Diode forward voltage V SD I S =340mA, V GS = 0V 1.3 V DYNAMIC CHARACTERISTICS (note 4) Input Capacitance C iss V DS =25V,V GS =0V,f =1MHz 29 60 pF Output Capacitance C oss 10 15 pF Reverse Transfer Capacitance C rss 2 6 pF SWITCHING CHARACTERISTICS (note 3,4) Turn-on delay time t d(on) V GS =10V,V DD =30V, I D =2.8A,R GEN =50Ω 8 ns Turn-on rise time t r 8 ns Turn-off delay time t d(off) 13 ns Turn-off fall time t f 16 ns Total Gate Charge Q g V DS =10V,I D =0.22A, V GS =10V 1.4 2 nC Gate-Source Charge Q gs 0.15 0.25 nC Gate-Drain Charge Q gd 0.2 0.4 nC Notes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=300μs, duty cycle≤2%. 3. Switching characteristics are independent of operating junction temperature. 4. Graranted by design，not subject to producting. MOSFET ELECTRICAL CHARACTERISTICS T =25 ℃ unless otherwise specified a SS123W B N-Channel MOSFET
50 100 150 200 250 300 350 0123456789 1 0 100 150 200 250 300 350 400 450 25 50 75 100 125 1.0 1.2 1.4 1.6 1.8 2.0 Pulsed Pulsed T a =100 V SD I S T a =25 SOURCE CURRENT I S (mA) SOURCE TO DRAIN VOLTAGE V SD (V) V GS =3V V GS =2.5V V GS =2V V GS =4V,5V,6V Output Characteristics DRAIN CURRENT I D (mA) DRAIN TO SOURCE VOLTAGE V DS (V) T a =25 Pulsed V GS =10V V GS =4.5V T a =25 Pulsed ON-RESISTANCE R DS(ON) DRAIN CURRENT I D (mA) I D ——R DS(ON) T a =100 T a =25 ON-RESISTANCE R DS(ON) GATE TO SOURCE VOLTAGE V GS (V) V GS ——R DS(ON) I D =0.17A V DS =3V Pulsed DRAIN CURRENT I D (mA) GATE TO SOURCE VOLTAGE V GS (V) Transfer Characteristics T a =100 T a =25 I D =250uA Threshold Voltage THRESHOLD VOLTAGE V TH (V) JUNCTION TEMPERATURE T j ( ) 7\\SLFDO&KDUDFWHULVWLFV SS123W B N-Channel MOSFET
Min. Max. Min. Max. A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF. 0.021 REF. Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP. 0.026 TYP. SS123W B N-Channel MOSFET Plastic surface mounted package; 3 leads SOT-323 PACKAGE OUTLINE