BSS123 FUTUREWAFER | Alldatasheet
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Technical content
1 Document Number:F51841A
22-May-2021 V2.0 www.futurewafer.com.tw BSS123 / BSS123W N-Channel Enhancement Mode MOSFET BSS123 SOT-23 G D S General Description These N-Channel Enhancement Mode Field Effect Transistors Are Produced by DMOS Technology。 These Products Have Been Designed to Minimize On-State Resistance While Provide Rugged, Reliable, And Fast Switching Performance.These Products Are Particularly Suited For Low Voltage,Low Current Applications Suce as Small Servo Motor Control, Power MOSFET Gate Drivers, And Other Switching Applications. Maximum Ratings@25°C Unless Otherwise Specified Parameter Symbol Ratings Units Drain-Source Voltage V DSS 100 V Gate-Source Voltage V GSS ± 20 Continuous Drain Current I D 170 mA Pulsed Drain Current 680 Pulse Drain Current I DM 1.0 A Feature List
- RDS(ON) = 3.5Ω @ VGS = 10V RDS(ON) = 6.0Ω @ VGS = 4.5V
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/output leakage
- Low Gate Threshold Voltage Mechanical Characteristics
- Molded JEDEC Package - SOT-23 - SOT-323
- Packing: Tape and Reel
- Flammability Rating UL 94V-0
- Halogen Free Absolute Maximum Ratings BSS123W SOT-323 D G S
2 Document Number:F51841A
22-May-2021 V2.0 www.futurewafer.com.tw BSS123 / BSS123W N-Channel Enhancement Mode MOSFET
Electrical Characteristics
Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown voltage BV DSS VGS = 0V,ID = 250uA 100 - - V Gate Threshold Voltage V GS(th) VGS = VDS,ID = 1.0mA 0.8 1.7 2.0 V Drain-Source Leakage Current I DSS VDS = 100V,VGS = 0V - - 1.0 uA Gate-Source Leakage Current I GSS VGS = ± 50V,VDS = 0V - - ± 50 nA Static Drain-Source On-Resistance R DS(ON) VGS = 10V,ID = 0.17A - 1.2 6.0 Ω Forward Transconductance g FS VDS = 10V, ID = 0.17A,f = 1KHZ 80 800 - mS Input Capacitance C ISS VGS = 0V,VDS = 25V, f = 1.0MHZ - 73 - pF Output Capacitance C OSS - 7 - Reverse Transfer Capacitance C RSS - 3.4 - Turn On Delay Time t d(ON) VGS = 10V,ID = 280mA, RG = 6Ω,VDD = 30V - 1.7 3.4 nS Turn Off Delay Time t d(OFF) - 17 31 Rise Time t r - 9.0 18 Fall Time t f - 2.4 5.0 Total Gate Charge Q G VGS = 10V,VDS = 30V, ID = 220mA - 1.8 2.5 nC Gate-Source Charge Q GS - 0.2 - Gate-Drain Charge Q GD - 0.3 - Drain-Source Diode Characteristics and Maximum Ratings Parameter Symbol Test Condition Min. Typ. Max. Units Maximum Continuous Source Current I S - - 170 mA Maximum Pulse Source Current I SM - - 880 Drain-Source diode forward voltage V SD VGS = VDS,IS = 340mA - 0.8 1.3 V Diode Reverse Recovery Time t rr - 11 - nS IF = 0.17A,diF/dt = 100A/us Diode Reverse Recovery Charge Q rr - 3 - nC Parameter Symbol Ratings Units Maximum Power Dissipation P D 360 mW Derate Above 25°C 2.8 mW/°C Thermal Resistance,Junction to Ambient R ΘJA 350 °C/W Operating and Storage Temperature Range T STG °C -55 to +150 Junction Temperature Range T J Thermal Characteristics
3 Document Number:F51841A
22-May-2021 V2.0 www.futurewafer.com.tw BSS123 / BSS123W N-Channel Enhancement Mode MOSFET Rating and Characteristic Curve Fig 1. On-Region Characteristics VDS,Drain to Source Voltage(V) ID,Drain Current(A) ID,Drain Current(A) RDS(ON),Normalized Drain-Source TJ,Junction Temperature(°C) RDS(ON),Normalized Drain-Source On-Resistance VGS,Gate to Source Voltage(V) RDS(ON),On resistance(ohm) Fig 2. On-Resistance Variation with Drain Current and Gate Voltage Fig 3. On-Resistance Variation with Temperature Fig 4. On-Resistance Variation with Gate to Source Voltage
4 Document Number:F51841A
22-May-2021 V2.0 www.futurewafer.com.tw BSS123 / BSS123W N-Channel Enhancement Mode MOSFET Fig 5. Transfer Characteristics. VGS,Gate to Source Voltage(V) ID,Drain Current(A) Fig 6. Body Diode Forward Voltage Variation with Source Current and Temperature VSD,Body Diode Forward Voltage(V) IS,Reverse Drain Current(A) Fig 7. Gate Charge Characteristics Qg,Gate Charge(nC) VGS,Gate to Source Voltage(V) VDS,Drain to Source Voltage(V) Capacitance(pF) Fig 8. Capacitance Characteristics Rating and Characteristic Curve
5 Document Number:F51841A
22-May-2021 V2.0 www.futurewafer.com.tw BSS123 / BSS123W N-Channel Enhancement Mode MOSFET Fig 9.Maximum Safe Operating Area VDS,Drain to Source Voltage(V) ID,Drain Current(A) Fig 10.Single Pulse Maximum Power Dissipation T1,Time(sec) Ppk,Peak Transient Power(W) Fig 11.Transient Thermal Response Curve. Tt,Time(sec) R(t),Normalized Effective Transient Thermal Resistance Rating and Characteristic Curve
6 Document Number:F51841A
22-May-2021 V2.0 www.futurewafer.com.tw BSS123 / BSS123W N-Channel Enhancement Mode MOSFET Soldering Parameters
7 Document Number:F51841A
22-May-2021 V2.0 www.futurewafer.com.tw BSS123 / BSS123W N-Channel Enhancement Mode MOSFET
Ordering information
Package Information
A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8°C Dimension Millimeter Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35
8 Document Number:F51841A
22-May-2021 V2.0 www.futurewafer.com.tw BSS123 / BSS123W N-Channel Enhancement Mode MOSFET A 0.8 1.1 - A1 - 0.1 - bp 0.3 0.4 - c 0.10 0.25 - D 1.8 2.2 - E 1.15 1.35 - e - - 1.3 e1 - - 0.65 HE 2.0 2.2 - Lp 0.15 0.45 - Q 0.13 0.23 - v - - 0.2 w - - 0.2
9 Document Number:F51841A
22-May-2021 V2.0 www.futurewafer.com.tw BSS123 / BSS123W N-Channel Enhancement Mode MOSFET History Version Date File No. Recording Basis A 29-Sep-2018 F51841A New Create Market B 15-May-2019 F51841A Update Company Information System 2.0 22-May-2021 F51841A Update Version System Futurewafer Technology Co.,Ltd 台灣未來芯科技股份有限公司 Tel ：+886-3-3350161/FAX ：+886-3-3350172 cherry@futurewafer.com.tw No. 286-14, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan Part No Marking Code Package Packing BSS123 B123. SOT-23 7” Reel/3,000pcs BSS123W SOT-323