BSS123Q
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Document number: DS43455 Rev. 1 - 2 1 of 7 www.diodes.com February 2021 © Diodes Incorporated BSS123Q ADVANCE INFORMATION N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) ID TA = +25° C 100V 6Ω @ VGS = 10V 0.17A 10Ω @ VGS = 4.5V 0.14A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC -Q101, supported by a PPAP and is ideal for use in: Small Servo Motor Control Power MOSFET Gate Drivers Switching Applications Features and Benefits Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The BSS123Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging BSS123Q-7 SOT23 3,000 / Tape & Reel BSS123Q-13 SOT23 10,000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 2032 Code I J K L M N O P R S T U Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D D G S D S G Equivalent Circuit Top View Top View SOT23 K23 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: I = 2021) M = Month (ex: 9 = September)
Document number: DS43455 Rev. 1 - 2 2 of 7 www.diodes.com February 2021 © Diodes Incorporated BSS123Q ADVANCE INFORMATION Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage Continuous VGSS ±20 V Continuous Drain Current (Note 5) VGS = 10V Continuous ID 0.17 A Pulsed IDM 0.68 Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Max Unit Power Dissipation (Note 5) PD 300 mW Thermal Resistance, Junction to Ambient @TA = +25° C (Note 5) RθJA 417 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 ° C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 100 — — V VGS = 0V, ID = 250A Zero Gate Voltage Drain Current IDSS — — 0.1 A VDS = 100V, VGS = 0V — — 30 A VDS = 100V, VGS = 0V @ TA = +150°C (Note 7) — — 10 nA VDS = 20V, VGS = 0V Gate-Source Leakage , Forward IGSSF — — 50 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) 0.8 1.4 2.0 V VDS = VGS, ID = 1mA Static Drain-Source On-Resistance RDS(ON) — 4.0 6 Ω VGS = 10V, ID = 0.17A — 3.6 10 VGS = 4.5V, ID = 0.17A Forward Transfer Admittance gFS 80 370 — ms VDS =10V, ID = 0.17A, f = 1.0kHz Diode Forward Voltage VSD — 0.84 1.3 V VGS = 0V, IS = 0.34A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 22 60 pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — — 15 Reverse Transfer Capacitance Crss — 2.0 6 SWITCHING CHARACTERISTICS (Note 7) Turn-On Delay Time tD(ON) — — 8 ns VGS = 10V, VDD = 30V, ID = 0.28A, RGEN = 50Ω Turn-On Rise Time tR — — 8 ns Turn-Off Delay Time tD(OFF) — — 13 ns Turn-Off Fall Time tF — — 16 ns 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing.
Figure 13. Transient Thermal Resistance
Document number: DS43455 Rev. 1 - 2 6 of 7 www.diodes.com February 2021 © Diodes Incorporated BSS123Q ADVANCE INFORMATION Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 J K1 K GAUGE PLANE 0.25 H L M All 7° A C B D GF a Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 X Y Y1 C
Document number: DS43455 Rev. 1 - 2 7 of 7 www.diodes.com February 2021 © Diodes Incorporated BSS123Q ADVANCE INFORMATION IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTIC ULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operati on of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engi neering customers and users who design with Diodes products. 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