BSS123L AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com BSS123L MOSFET N-CHANNEL POWER MOSFET REV1.0 - JUL 2015 RELEASED - - 1 - DESCRIPTION FEATURES The BSS123L is available in SOT-23 package  Available in SOT-23 package ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SOT-23 BSS123L Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products ABSOLUTE MAXIMUM RATINGS VDSS, Drain–Source Voltage 100Vdc VGS, Gate–Source Voltage– Continuous VGSM, Gate–Source Voltage– Non–repetitive (tp ≤ 50 µs) ±20Vdc ±40Vpk ID, Drain Current Continuous NOTE1 IDM, Drain Current Pulsed NOTE2 0.17Adc 0.68Adc Stresses above may cause permanent damage to the device. These are stress ratings only and functional ope ration of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL CHARACTERISTICS NOTE1: The Power Dissipation of the package may result in a lower continuous drain current. NOTE2: Pulse Width ≤300µs, Duty Cycle ≤ 2.0%. NOTE3: FR–5 = 1.0 x 0.75x 0.062 in. Parameter Symbol Max Unit Total Device Dissipation FR–5 Board NOTE3 TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Junction and Storage Temperature TJ, TSTG -55 to +150 °C

AiT Semiconductor Inc. www.ait-ic.com BSS123L MOSFET N-CHANNEL POWER MOSFET REV1.0 - JUL 2015 RELEASED - - 2 -

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage V(BR)DSS VGS = 0, ID = 250µAdc 100 - - Vdc Zero Gate Voltage Drain Current IDSS VGS = 0, VDS = 100Vdc TJ = 25°C - - 15 µAdc TJ = 125°C - - 60 Gate–Body Leakage Current IGSS VGS = 20Vdc, VDS = 0 - - 50 nAdc ON CHARACTERISTICS NOTE4 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1.0mAdc 0.8 - 2.0 Vdc Static Drain–Source On–Resistance RDS(on) VGS = 10Vdc, ID = 100mAdc 5.0 6.0 Ω Forward Transconductance gfs VDS = 25Vdc, ID = 100mAdc 80 - - mmhos DYNAMIC CHARACTERISTICS Input Capacitance Ciss VDS = 25Vdc, VGS = 0, f = 1.0 MHz - 20 - pF Output Capacitance Coss VDS = 25Vdc, VGS = 0, f = 1.0 MHz - 9.0 - pF Reverse Transfer Capacitance Crss VDS = 25Vdc, VGS = 0, f = 1.0 MHz - 4.0 - pF SWITCHING CHARACTERISTICS NOTE4 Turn–On Delay Time td(on) VCC = 30Vdc, IC = 0.28Adc, VGS = 10Vdc, RGS = 50Ω - 20 - ns Turn–Off Delay Time td(off) - 40 - ns REVERSE DIODE Diode Forward On–Voltage VSD ID = 0.34Adc, VGS = 0Vdc - - 1.3 V NOTE4: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%.

AiT Semiconductor Inc. www.ait-ic.com BSS123L MOSFET N-CHANNEL POWER MOSFET REV1.0 - JUL 2015 RELEASED - - 4 -

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm) DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.80 3.04 0.1102 0.1197 B 1.20 1.40 0.0472 0.0551 C 0.89 1.11 0.0350 0.0440 D 0.37 0.50 0.0150 0.0200 G 1.78 2.04 0.0701 0.0807 H 0.013 0.100 0.0005 0.0040 J 0.085 0.177 0.0034 0.0070 K 0.35 0.69 0.0140 0.0285 L 0.89 1.02 0.0350 0.0401 S 2.10 2.64 0.0830 0.1039 V 0.45 0.60 0.0177 0.0236

AiT Semiconductor Inc. www.ait-ic.com BSS123L MOSFET N-CHANNEL POWER MOSFET REV1.0 - JUL 2015 RELEASED - - 5 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.