BSS123K

BSS123K

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• Manufacturer or author: Diodes Incorporated
• PDF pages: 7

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Document number: DS42952 Rev. 2 - 2 1 of 7 www.diodes.com November 2020 © Diodes Incorporated BSS123K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) ID TA = +25° C 100V 6Ω @ VGS = 10V 230mA 10Ω @ VGS = 4.5V 178mA Description and Applications This MOSFET is designed to minimize the on -state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Small Servo Motor Control  Power MOSFET Gate Drivers  Switching Applications Features and Benefits  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  High Drain-Source Voltage Rating  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data  Case: SOT23  Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Matte Tin Finish Annealed over Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208  Terminal Connections: See Diagram  Weight: 0.008 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging BSS123K-7 SOT23 3,000/Tape & Reel BSS123K-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 2031 Code H I J K L M N O P R S T Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Equivalent Circuit Top View Top View SOT23 ESD Protected K12 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: H = 2020) M = Month (ex: 9 = September) K12 SOT23

Document number: DS42952 Rev. 2 - 2 2 of 7 www.diodes.com November 2020 © Diodes Incorporated BSS123K Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25° C TA = +70°C ID 230 184 mA Maximum Body Diode Forward Current IS 230 mA Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 600 mA Pulsed Source Current (10µs Pulse, Duty Cycle = 1%) ISM 600 mA Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 0.5 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 264 ° C/W Total Power Dissipation (Note 6) PD 0.7 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 178 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 100 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS — — 1.0 µA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS — — ± 10 µA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.8 — 2.0 V VDS = VGS, ID = 1mA Static Drain-Source On-Resistance RDS(ON) — 3.6 3.8 10 Ω VGS = 10V, ID = 0.17A VGS = 4.5V, ID = 0.17A Diode Forward Voltage VSD — 0.87 1.3 V VGS = 0V, IS = 0.34A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 38 — pF VDS = 50V, VGS = 0V f = 1.0MHz Output Capacitance Coss — 2.9 — pF Reverse Transfer Capacitance Crss — 1.8 — pF Gate Resistance Rg — 37 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 0.7 — nC VDS = 50V, ID = 0.23A Total Gate Charge (VGS = 10V) Qg — 1.3 — nC Gate-Source Charge Qgs — 0.2 — nC Gate-Drain Charge Qgd — 0.4 — nC Turn-On Delay Time tD(ON) — 2.9 — ns VDD = 50V, VGS = 10V, Rg = 50Ω, ID = 0.23A Turn-On Rise Time tR — 2.4 — ns Turn-Off Delay Time tD(OFF) — 15.3 — ns Turn-Off Fall Time tF — 6.7 — ns Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testi ng.

Figure 13. Transient Thermal Resistance

Document number: DS42952 Rev. 2 - 2 6 of 7 www.diodes.com November 2020 © Diodes Incorporated BSS123K Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 J K1 K GAUGE PLANE 0.25 H L M All 7° A C B D GF a X Y Y1 C SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mm Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9

Document number: DS42952 Rev. 2 - 2 7 of 7 www.diodes.com November 2020 © Diodes Incorporated BSS123K IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTIC ULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operati on of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products. 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