BSS123I INFINEON | Alldatasheet

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Technical content

Features

  • N-channel
  • Enhancementmode
  • Logiclevel(4.5Vrated)
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max,VGS=10V 6 Ω RDS(on),max,VGS=4.5V 10 Ω ID 0.19 A ESD Sensitivity, JESD22-A114 (HBM) class 0 (<250V) Type/OrderingCode Package Marking RelatedLinks BSS123I PG-SOT23 AIs -

OptiMOSTMSmall-Signal-Transistor,100V BSS123I Rev.2.1,2021-02-01Final Data Sheet TableofContents

OptiMOSTMSmall-Signal-Transistor,100V BSS123I Rev.2.1,2021-02-01Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID 0.19

0.15 A VGS=10V,TA=25°C

VGS=4.5V,TA=70°C Pulsed drain current ID,pulse - - 0.77 A TA=25°C Avalanche energy, single pulse EAS - - 2.0 mJ ID=0.19A,RGS=25Ω Reversediodedv/dt dv/dt - - 6 kV/µs ID=0.19A,VDS=80V,di/dt=200A/µs, Tj,max=150°C Gate source voltage VGS -20 - 20 V - Power dissipation1) Ptot - - 0.5 W TA=25°C,RTHJA=250°C/W Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - ambient, minimum footprint1) RthJA - - 250 K/W - 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=250µA Gate threshold voltage VGS(th) 0.8 1.4 1.8 V VDS=VGS,ID=13µA Zero gate voltage drain current IDSS 0.01 5 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - - 10 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 2.4 2.7 10 Ω VGS=10V,ID=0.19A VGS=4.5V,ID=0.15A Transconductance gfs - 0.41 - S |VDS|≥2|ID|RDS(on)max,ID=0.15A 1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB

OptiMOSTMSmall-Signal-Transistor,100V BSS123I Rev.2.1,2021-02-01Final Data Sheet Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 15 - pF VGS=0V,VDS=50V,f=1MHz Output capacitance Coss - 2.5 - pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance Crss - 1.6 - pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 2.3 - ns VDD=50V,VGS=10V,ID=0.19A, RG,ext=6Ω Rise time tr - 3.2 - ns VDD=50V,VGS=10V,ID=0.19A, RG,ext=6Ω Turn-off delay time td(off) - 7.4 - ns VDD=50V,VGS=10V,ID=0.19A, RG,ext=6Ω Fall time tf - 22 - ns VDD=50V,VGS=10V,ID=0.19A, RG,ext=6Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 0.04 - nC VDD=50V,ID=0.19A,VGS=0to10V Gate to drain charge Qgd - 0.23 - nC VDD=50V,ID=0.19A,VGS=0to10V Gate charge total Qg - 0.63 - nC VDD=50V,ID=0.19A,VGS=0to10V Gate plateau voltage Vplateau - 2.5 - V VDD=50V,ID=0.19A,VGS=0to10V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 0.19 A TA=25°C Diode pulse current IS,pulse - - 0.77 A TA=25°C Diode forward voltage VSD - 0.86 1.1 V VGS=0V,IF=0.19A,Tj=25°C Reverse recovery time trr - 12 18 ns VR=50V,IF=0.19A,diF/dt=100A/µs Reverse recovery charge Qrr - 4.3 6.5 nC VR=50V,IF=0.19A,diF/dt=100A/µs

OptiMOSTMSmall-Signal-Transistor,100V BSS123I Rev.2.1,2021-02-01Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TA[°C] Ptot[W] 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Ptot=f(TA) Diagram2:Draincurrent TA[°C] ID[A] 100 120 140 160 0.00 0.04 0.08 0.12 0.16 0.20 ID=f(TA);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 103 10-4 10-3 10-2 10-1 100 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TA=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJA[K/W] 10-4 10-3 10-2 10-1 100 101 102 101 102 103 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ZthJA=f(tp);parameter:D=tp/T

OptiMOSTMSmall-Signal-Transistor,100V BSS123I Rev.2.1,2021-02-01Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 4 V 10 V 3.3 V 3 V 2.8 V ID=f(VDS),Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[Ω ] 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 2.8 V 3 V 3.3 V 4.5 V 10 V RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 150 °C 25 °C ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.drain-sourceonresistance VGS[V] RDS(on)[Ω ] 150 °C 25 °C RDS(on)=f(VGS),ID=0.19A;parameter:Tj

OptiMOSTMSmall-Signal-Transistor,100V BSS123I Rev.2.1,2021-02-01Final Data Sheet Diagram9:Normalizeddrain-sourceonresistance Tj[°C] RDS(on)(normalizedto25°C) -80 -40 120 160 0.0 0.4 0.8 1.2 1.6 2.0 2.4 RDS(on)=f(Tj),ID=0.19A,VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -80 -40 120 160 0.0 0.4 0.8 1.2 1.6 2.0 130 µA 13 µA VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 100 100 101 102 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.00 0.25 0.50 0.75 1.00 1.25 1.50 10-3 10-2 10-1 100 25 °C 25 °C, max 150 °C 150 °C, max IF=f(VSD);parameter:Tj

OptiMOSTMSmall-Signal-Transistor,100V BSS123I Rev.2.1,2021-02-01Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 10-3 10-2 10-1 100 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj,start Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 20 V 50 V 80 V VGS=f(Qgate),ID=0.19Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -80 -40 120 160 100 105 110 115 VBR(DSS)=f(Tj);ID=250µA Diagram Gate charge waveforms

OptiMOSTMSmall-Signal-Transistor,100V BSS123I Rev.2.1,2021-02-01Final Data Sheet 5PackageOutlines DIMENSIONSMIN.MAX.A2bDcEeL AA1 1.020.88 0.500.203.04 0.602.64 MILLIMETERS0.890.011.120.10 PG-SOT23-3-U01REVISION: 01DATE: 09.12.2020PACKAGE - GROUPNUMBER: E11.201.40e11.90O0°8° Figure1OutlinePG-SOT23,dimensionsinmm

OptiMOSTMSmall-Signal-Transistor,100V BSS123I Rev.2.1,2021-02-01Final Data Sheet RevisionHistory BSS123I Revision:2021-02-01,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2021-01-26 Release of final version 2.1 2021-02-01 Update format Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.