BSS123A ZETEX | Alldatasheet
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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 4 – APRIL 1998
FEATURES
*B V DSS = 100V * Low Threshold PARTMARKING DETAIL – SAA ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL V ALUE UNIT Drain-Source Voltage V DS 100 V Drain-Gate Voltage V DGR 100 V Continuous Drain Current at T amb=25°C I D 170 mA Pulsed Drain Current I DM 680 mA Gate-Source Voltage V GS ± 20 V Power Dissipation at T amb=25°C P tot 360 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 100 V I D=0.25mA, V GS=0V Gate-Source Threshold Voltage VGS(th) 0.5 2.0 V I D=1mA, V DS= VGS Gate-Body Leakage I GSS 50 nA VGS=± 20V, V DS=0V Zero Gate Voltage Drain Current IDSS 500 nA V DS=100V, V GS=0V Static Drain-Source On-State Resistance (1) RDS(on) 6 Ω Ω VGS=10V, I D=170mA VGS=4.5V, I D=170mA Forward Transconductance(1)(2) gfs 80 mS V DS=25V, I D=100mA Input Capacitance (2) C iss 25 pF VDS=25V, V GS=0V, f=1MHzCommon Source Output Capacitance (2) Coss 9p F Reverse Transfer Capacitance (2) Crss 4p F Turn-On Delay Time (2)(3) t d(on) 10 ns VDD ≈30V, I D=280mARise Time (2)(3) t r 10 ns Turn-Off Delay Time (2)(3) t d(off) 15 ns Fall Time (2)(3) t f 25 ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator BSS123A D G S