BSS123 ZETEX | Alldatasheet
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SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996 ✪ PARTMARKING DETAIL – SA ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 100 V Drain-Gate Voltage V DGR 100 V Continuous Drain Current at Tamb=25°C I D 170 mA Pulsed Drain Current I DM 680 mA Gate-Source Voltage V GS ± 20 V Peak Gate-Source Voltage V GSM ± 20 V Power Dissipation at Tamb=25°C P tot 360 mW Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 100 V I D=0.25mA, VGS=0V Gate-Source Threshold Voltage VGS(th) 0.8 2.2 2.8 V I D=1mA, VDS= VGS Gate-Body Leakage I GSS 10 50 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain Current IDSS 1 µA µA nA V DS=100V, VGS=0V VDS=100V, VGS=0V, T=125°C(2) VDS=20V, VGS=0V Static Drain-Source On-State Resistance (1) RDS(on) 56 Ω VGS=10V, ID=100mA Forward Transconductance(1)(2) gfs 80 120 mS V DS=25V, ID=100mA Input Capacitance (2) C iss 20 pF VDS=25V, VGS=0V, f=1MHz Common Source Output Capacitance (2) Coss 9p F Reverse Transfer Capacitance (2) Crss 4p F Turn-On Delay Time (2)(3) t d(on) 10 ns VDD ≈30V, I D=280mA Rise Time (2)(3) t r 10 ns Turn-Off Delay Time (2)(3) t d(off) 15 ns Fall Time (2)(3) t f 25 ns (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator For typical characteristics graphs see ZVN3310F datasheet. BSS123 D G S 3 - 70