BSS123 YANGJIE | Alldatasheet

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Technical content

Yangzhou Yangjie Electronic Technology Co., Ltd. S-S1966 Rev.2.0,25-Dec-18 www.21yangjie.com N-Channel Enhancement Mode Field Effect Transistor Product Summary

  • VDS 100V
  • ID 200mA
  • RDS(ON)( at VGS=10V) ＜5.0ohm
  • RDS(ON)( at VGS=4.5V) ＜5.5ohm General Description
  • Trench Power MV MOSFET technology
  • Voltage controlled small signal switch
  • High density cell design for low RDS(ON)
  • Fast Switching Speed

Applications

  • Small servo motor control
  • Power MOSFET gate drivers
  • Switching application ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 100 V Gate-source Voltage VGS ±20 V Drain Current TA=25℃ @ Steady State ID 200 mA TA=70℃ @ Steady State 160 Pulsed Drain Current A IDM 800 mA Total Power Dissipation @ TA=25℃ PD 350 mW Thermal Resistance Junction-to-Ambient @ Steady State B RθJA 357 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE BSS123 F2 B123. 3000 30000 120000 7“ reel COMPLIANT RoHS

Yangzhou Yangjie Electronic Technology Co., Ltd. S-S1966 Rev.2.0,25-Dec-18 www.21yangjie.com ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V 1 μA Gate-Body Leakage Current IGSS1 VGS= ±20V, VDS=0V ±100 nA IGSS2 VGS= ±10V, VDS=0V ±50 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.0 1.8 2.5 V Static Drain-Source On-Resistance RDS(ON) VGS= 10V, ID=200mA 3.0 5.0 Ω VGS= 4.5V, ID=175mA 3.5 5.5 Diode Forward Voltage VSD IS=200mA,VGS=0V 1.2 V Maximum Body-Diode Continuous Current IS 200 mA Dynamic Parameters Input Capacitance Ciss VDS=50V,VGS=0V,f=1MHZ pF Output Capacitance Coss 10 Reverse Transfer Capacitance Crss 5 Switching Parameters Total Gate Charge Qg VGS=10V,VDS=50V,ID=0.2A 1.8 2.5 nC Turn-on Delay Time tD(on) VGS=10V,VDD=50V, ID=0.2A, RGEN=6Ω 1.7 ns Turn-on Rise Time tr 9 Turn-off Delay Time tD(off) 17 Turn-off fall Time tf 7 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.

Yangzhou Yangjie Electronic Technology Co., Ltd. S-S1966 Rev.2.0,25-Dec-18 www.21yangjie.com ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance

Yangzhou Yangjie Electronic Technology Co., Ltd. S-S1966 Rev.2.0,25-Dec-18 www.21yangjie.com Figure7. Safe Operation Area Figure8. Switching wave

Yangzhou Yangjie Electronic Technology Co., Ltd. S-S1966 Rev.2.0,25-Dec-18 www.21yangjie.com ■ SOT-23 Package information ■SOT-23 Suggested Pad Layout

Yangzhou Yangjie Electronic Technology Co., Ltd. S-S1966 Rev.2.0,25-Dec-18 www.21yangjie.com Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used w ith equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear -reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulti ng from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.