BSS123 WEITRON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
http://www.weitron.com.tw BSS123 Rating Symbol Value Unit VDSS VGS ID IDM PD R JA Operating Junction and Storage Temperature Range (1) (2) TJ, Tstg -55 to 150 C V V mA mA mW C/W Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Drain Current Power Dissipation (TA=25 C) Maximax Junction-to-Ambient Maximum Ratings (TA=25 C Unless Otherwise Specified) Device Marking BSS123=SA Power MOSFET N-Channel GATE SOURCE DRAIN SOT-23 3Features: *Low On-Resistance : 6.0 *Low Input Capacitance: 20PF *Low Out put Capacitance : 9PF *Low Threshole :2.8V *Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. W q 100 170 680 225 556
http://www.weitron.com.tw BSS123 Note: Input Capacitance VDS=25V, Output Capacitance VDS=25V, Transfer Capacitance VDG=25V, Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Threshold Voltage VDS=V , ID=1.0 mA Gate-body Leakage Current VGS= Static Drain-to-Source On-Resistance VGS=10V, ID=0.1A Forward Trans Conductance VDS=25V, ID=100 mA Static Dynamic Characteristics Switching Characteristics Reverse Diode Characteristic Symbol UnitMin Typ Max V(BR)DSS VGS (th) gfs rDS (on) IGSS IDSS Ciss Coss Crss td(on) td(off ) 100 - - V 0.8 - 2.8 V - - - 15 50 nA uA 5.0 8.0 6.0 ms 9.0 4.0 PF nS Electrical Characteristics (TA=25 C Unless otherwise noted) Zero Gate Voltage Drain Current VDS=0V, VGS=100V, VDS=0V, VGS=100V, Tj=125 C - - - - - - Diode Forward On-Voltage 20V, V =0VDS Turn-On Delay Time Turn-Off Delay Time (V =30V, I =0.28A, CC GS C D GS VSD 1.3 1. Pulse Test: Pulse Width 300us, Duty Cycle 2%. <_<_ GS V (1) (1) Tj=25 C W W VGS=0, f=1.0 MHz VGS=0, f=1.0 MHz VGS=0, f=1.0 MHz VGS=10V, R =50 ) __ __
http://www.weitron.com.tw BSS123 FIG.1 Ohmic Region FIG.3 Temperature Versus Static Drain-Source On-Resistance FIG.4 Temperature Versus Gate Threshold Voltage FIG.2 Transfer Characteristics V ,DRAIN SOURCE VOLTAGE(V) T ,TEMPERATURE( C) DS V ,GATE SOURCE VOLTAGE(V)GS I ,DRIAN CURRENT(A)D I ,DRIAN CURRENT(A)D I ,STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) DS(on) V ,THRESHOLD VOLTAGE (NORMZLIZED)GS(th) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1.0 0.8 0.6 0.4 0.2 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140 T =25 C a V =10VGS V =10V I =200mA GS V =VDS GS D I =1.0mAD V =10VGS -55 C 125 C T ,TEMPERATURE( C) 25 C