BSS123 SKTECHNOLGY | Alldatasheet
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S Wg oz x: BAY orice BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR © Features * Low Inpu i « Low Input/Output Leakage [ i ° = e High Drain-Source Voltage Rating [e] oe [s] ea ae [| oa0_| as | © Mechanical Data oe = ° Fao * Case: SOT-23, Molded Plastic Ged eek 4 [a | 173 | 205 | * Case material - UL Flammability Rating 94V-0 toe tt spel OF a [ 240 | 3.00 | « Moisture sensitivity: Level 1 per J-STD-020A * « Terminals: Solderable per MIL-STD-202, > | 3 [oors | 0.10 | Method 208 | «| 003 | 1.10 | * Terminal Connections: See Diagram | t | 045 | 061 | + Marking: K23 (See Page 3) «| [mw _[ 0.085 | 0.180 | Ordering & Date Code Information: See Page 3 — po [o | & | Weight: 0.008 grams (approx.) = | All Dimensions in mm | © Maximum Ratings @ T=25°C unless otherwise specified Characteristic | Symbot | wssiz3 | its [Dansoueevouse | ows] | [ ra-cstevotage Res zaaKe——doee | todY Si A Pulsed 680 [ToaiPowerDsapaten Noe) Sia [Tema Restre,untonie Anant Wee) [Fax «| a? dow REV.08 1 of 3
V4 0% ae SHIKUES © Electrical Characteristics — @ T= 25°C unless otherwise specified OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage [ BVoss | 100 [| — | — | V_| Vas=O0V,lp=250nA ‘ON CHARACTERISTICS (Note 2) | Forward Transconductance | ges | 80 | 970 | — | ms | Vos= 10V, lo=0.17A, f= 1.0KHe Drain-Source Diode Forward Voltage | Vso | — | 084 | 13 | v | Vos=0V,ls=0.34A DYNAMIC CHARACTERISTICS Input Capacitance [ es | — | 20 | 60 | pF | SWITCHING CHARACTERISTICS Turn-Off Fall Time [| | — | = J 16 | ns | vop=s0v, tp= 0.288, Tum-On Oly Tine [eee | ——[ [8 [ne | Retr B00 os 6 Tum-Off Delay Time [ton | — | — | 13 | ns | J Note: 2. Short duration test pulse used to minimize self-heating effect. 06 ie Pad Zz % os \\ ZZ ae 2° V Z ao 3 04 WY s “ /| y z
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fa] y e —= = Yi | i | | " ° o1 02 03 04 05 06 ° ' 2 . 4 . Jp, DRAIN-SOURCE CURRENT (A) Vos, DRAIN-SOURCE VOLTAGE (V) Fig. 2 On-Resistance Variation with Gate Voltage Fig. 1 On-Region Characteristics and Drain-Source Current REV.08 2 of 3
S% 6H | nena BSS123 w 412 rs | z gy CLTTLILLLy g Von Yo 27-TTrrlfli a MR Ip = 250nA D 18 7 a TN gS TT vere | FA ane & 16 Ip = 170m L E NI e“l TTA Le fos Ss aan eeee ALLEL bet zo eS . DRE PLLLILELLL] fk : 2“ (LLL SL > o7 04 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T,, JUNCTION TEMPERATURE (°C) T,, JUNCTION TEMPERATURE (°C) Fig. 3 Gate Threshold Variation with Temperature Fig. 4 On-Resistance Variation with Temperature es 40 | | [| |
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