BSS123 INFINEON | Alldatasheet

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Rev. 1.0 BSS123 SIPMOS  Small-Signal-Transistor Product Summary VDS 100 V RDS(on) 6 Ω ID 0.17 A Feature

  • N-Channel
  • Enhancement mode
  • Logic Level
  • dv/dt rated SOT23 VPS05161 Gate pin1 Drain pin 3 Source pin 2 Marking SAs SAs Type Package Ordering Code Tape and Reel Information BSS123 SOT23 Q62702-S512 E6327: 3000 pcs/reel BSS123 SOT23 Q67000-S245 E6433: 10000 pcs/reel Maximum Ratings , at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID 0.17 0.14 A Pulsed drain current TA=25°C ID puls 0.68 Reverse diode dv/dt IS=0.17A, VDS =80V, di/dt=200A/µs, Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V ESD Sensitivity (HBM) as per MIL-STD 883 Class 1 Power dissipation TA=25°C Ptot 0.36 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56

Rev. 1.0 BSS123 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - ambient at minimum footprint R thJA - - 350 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V GS =0, ID =250µA V(BR)DSS 100 - - V Gate threshold voltage, VGS = VDS ID=50µA VGS(th) 0.8 1.4 1.8 Zero gate voltage drain current V DS =100V, VGS =0, Tj=25°C V DS =100V, VGS =0, Tj=150°C IDSS 0.01 µA Gate-source leakage current V GS =20V, VDS =0 IGSS - - 10 nA Drain-source on-state resistance V GS =4.5V, ID=0.13A R DS(on) - 4 10 Ω Drain-source on-state resistance V GS =10V, ID =0.17A R DS(on) - 3 6

Rev. 1.0 BSS123 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs V DS ≥2*ID*R DS(on)max, ID=0.14A 0.09 0.19 - S Input capacitance Ciss V GS =0, V DS =25V, f=1MHz - 55 69 pF Output capacitance Coss - 8.5 10.6 Reverse transfer capacitanceCrss - 5 6.3 Turn-on delay time td(on) V DD =50V, VGS =10V, ID=0.17A, R G =6Ω - 2.7 4 ns Rise time tr - 3.1 4.6 Turn-off delay time td(off) - 9.9 14.8 Fall time tf - 25 37 Gate Charge Characteristics Gate to source charge Q gs VDD =80V, ID =0.17A - 0.055 0.082 nC Gate to drain charge Q gd - 0.77 1.15 Gate charge total Q g VDD =80V, ID =0.17A, VGS =0 to 10V - 1.78 2.67 Gate plateau voltage V(plateau)VDD =80V, ID = 0.17 A - 2.6 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - 0.17 A Inv. diode direct current, pulsedISM - - 0.68 Inverse diode forward voltageVSD V GS =0, IF = IS - 0.81 1.2 V Reverse recovery time trr V R=50V, IF=lS , diF/dt=100A/µs - 27.6 41.1 ns Reverse recovery charge Q rr - 10.5 15.7 nC

Rev. 1.0 BSS123

1 Power dissipation

Ptot = f (TA ) 0 20 40 60 80 100 120 °C 160 TA 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 W 0.38 BSS123 P tot

2 Drain current

I D = f (TA) parameter: VGS ≥ 10 V 0 20 40 60 80 100 120 °C 160 TA 0.02 0.04 0.06 0.08 0.1 0.12 0.14 A 0.18 BSS123 ID

3 Safe operating area

I D = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 0 10 1 10 2 10 3 V VDS -3 10 -2 10 -1 10 0 10 1 10 A BSS123 ID R DS(on) = V DS / I D DC 10 ms 1 ms tp = 120.0µs

4 Transient thermal impedance

Z thJA = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 K/W BSS123 ZthJA single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Rev. 1.0 BSS123 5 Typ. output characteristic ID = f (VDS ) parameter: Tj = 25 °C, VGS 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 A 0.7 ID 10V 4.5V 4.1V 3.9V 3.7V 3.5V 3.1V 2.9V 2.3V 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: Tj = 25 °C, VGS ID Ω R DS(on) 2.3V 2.9V 3.1V 3.5V 3.7V 3.9V 4.1V 4.5V 5.0V 10V 7 Typ. transfer characteristics ID = f ( VGS ); VDS ≥ 2 x ID x RDS(on)max parameter: Tj = 25 °C 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS 0.1 0.2 0.3 0.4 0.5 A 0.7 ID 8 Typ. forward transconductance gfs = f(ID ) parameter: Tj = 25 °C ID 0.05 0.1 0.15 0.2 0.25 0.3 S 0.4 gfs

Rev. 1.0 BSS123

9 Drain-source on-state resistance

R DS(on) = f (Tj) parameter : ID = 0.17 A, VGS = 10 V -60 -20 20 60 100 °C 180 Tj Ω BSS123 R DS(on) typ 98% 10 Typ. gate threshold voltage V GS(th) = f (Tj) parameter: VGS = VDS ; ID =50µA -60 -20 20 60 100 °C 160 Tj 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 V 2.2 V GS(th) typ. 98% 11 Typ. capacitances C = f ( VDS ) parameter: VGS =0, f=1 MHz, Tj = 25 °C 0 4 8 12 16 20 24 28 V 36 VDS 0 10 1 10 2 10 3 10 pF C C rss C iss C oss 12 Forward character. of reverse diode I F = f (VSD ) parameter: Tj VSD -3 10 -2 10 -1 10 0 10 A BSS123 IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

Rev. 1.0 BSS123 13 Typ. gate charge VGS = f (Q G ); parameter: VDS , ID = 0.17 A pulsed, Tj = 25 °C Q G V BSS123 V GS

0.2 VDS max

0.5 VDS max

0.8 VDS max

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 100 102 104 106 108 110 112 114 V 120 BSS123 V (BR)DSS

Rev. 1.0 BSS123 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.